Light‐induced degradation in indium‐doped silicon

Möller, Christian; Lauer, Kevin

doi:10.1002/pssr.201307165

Cited by 39 publications

(41 citation statements)

References 25 publications

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“…There are apparent conflicts in the literature regarding whether the properties of indium doped silicon change upon illumination, with some reporting stability and others a substantial degradation. Möller and Lauer found substantial lifetime degradation in indium doped samples, with degradation occurring much more slowly than in our samples . A recent study by Cho et al found that passivated emitter rear cells (PERC) made from indium doped silicon do not degrade under illumination, and Binns et al also concluded that only negligible lifetime degradation occurs in indium doped silicon upon light soaking .…”

Section: Discussionsupporting

confidence: 49%

“…In indium doped silicon, substantial lifetime degradation occurs in <1 second, with the lifetime then decaying to a steady state in a few minutes. As suggested by Möller and Lauer, we find that a 200°C anneal reverses the LID, and, as shown in Figure (a), the lifetime then again degrades under illumination at approximately the same rate as on previous degradation cycles.…”

Section: Results and Analysismentioning

confidence: 99%

“…By analysing the injection dependence of the lifetime, we extract the relevant defect parameters and hence enable general parameterization of lifetime in indium doped silicon. As there are apparent conflicts in the literature regarding whether indium doped silicon itself experiences LID, we perform LID experiments. We compare the final lifetimes to those expected for boron doped silicon with equivalent doping and oxygen concentrations after complete boron‐oxygen LID to assess the viability of indium doped silicon in PV applications.…”

Section: Introductionmentioning

confidence: 99%

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Minority carrier lifetime in indium doped silicon for photovoltaics

Murphy

Pointon

Grant

et al. 2019

Progress in Photovoltaics

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For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is now possible to produce indium doped silicon substrates with the required doping levels for solar cells. This study aims to understand factors controlling the minority carrier lifetime in such substrates with a view to enabling the quantification of the possible benefits of indium doped material. Experiments are performed using temperature‐dependent Hall effect and injection‐dependent carrier lifetime measurements. The recombination rate is found to vary linearly with the concentration of un‐ionized indium which exists in the sample at room temperature due to indium's relatively deep acceptor level at 0.15 eV from the valence band. Lifetime in indium doped silicon is also shown to degrade rapidly under illumination, but to a level substantially higher than in equivalent boron doped silicon samples. A window of opportunity exists in which the minority carrier lifetime in degraded indium doped silicon is higher than the equivalent boron doped silicon, indicating it may be suitable as the base material for front contact photovoltaic cells.

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Section: Discussionsupporting

confidence: 49%

Section: Results and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Minority carrier lifetime in indium doped silicon for photovoltaics

Murphy

Pointon

Grant

et al. 2019

Progress in Photovoltaics

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“…The drawback is that these have even smaller segregation coefficients than gallium of 2 × 10 −3 and 4 × 10 −4 , respectively [55,56]. Furthermore, aluminium is susceptible to the formation of recombination active defects with O i [57] and indium doped Cz wafers are also susceptible to LID [58].…”

Section: Decreasing the Boron Doping Concentrationmentioning

confidence: 99%

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

et al. 2017

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This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

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“…Though In and Ga are both viable alternatives to B‐dopants, the higher melting point of In (156 °C) can allow for improved doping uniformity in continuous Cz growth compared to Ga . Very few reports are available on the solar cell performance of In‐doped wafers and their LID response . Cho et al demonstrated 20.3% efficient PERC devices with no LID on Cz‐grown In‐doped wafers …”

Section: Introductionmentioning

confidence: 99%

Impact of Light Soaking on p‐Type Boron‐ and Indium‐Doped Passivated Emitter and Rear Solar Cells on Czochralski‐Grown Silicon

et al. 2019

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Solar cells fabricated on boron‐doped Czochralski‐grown silicon (Cz‐Si) wafers are known to suffer from light‐induced degradation (LID). In this work, the effect of light soaking on passivated emitter and rear (PERC) solar cells fabricated on both indium (In)‐doped Cz‐Si and boron (B)‐doped Cz‐Si wafers are investigated. Efficiencies up to 20.7% and 21.2% are obtained on In‐doped and B‐doped Si wafers, respectively. Though the initial conversion efficiency is lower with In‐doped Si wafers, these cells show no LID after light soaking (1.0 Sun illumination at 25 °C for 85 h). In contrast, cell efficiencies dropped significantly for B‐doped Si wafers, by 0.8%.

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Light‐induced degradation in indium‐doped silicon

Cited by 39 publications

References 25 publications

Minority carrier lifetime in indium doped silicon for photovoltaics

Minority carrier lifetime in indium doped silicon for photovoltaics

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Impact of Light Soaking on p‐Type Boron‐ and Indium‐Doped Passivated Emitter and Rear Solar Cells on Czochralski‐Grown Silicon

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