Line-profile and critical-dimension correlation between a normal-incidence optical CD metrology system and SEM

Yang, Weidong; Lowe-Webb, R.; Korlahalli, Rahul; Zhuang, V.; Sasano, H.; Liu, Wei; Mui, D. S. L.

doi:10.1117/12.473425

Cited by 7 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Optical imaging systems have commonly been used for measuring critical dimensions only slightly smaller than the dominant wavelength in the illumination beam [13]- [17]. The development of the microelectronics industry has created the need for reliable metrology techniques to characterize chip microstructures.…”

Section: Introductionmentioning

confidence: 99%

Precise Grating Profile Evaluation for DFB Lasers Using an Optical Metrology

Muroya

Makino

Umeda

et al. 2007

IEEE Trans. Semicond. Manufact.

View full text Add to dashboard Cite

A precise grating profile evaluation method for distributed-feedback (DFB) laser diodes was achieved using a simple optical metrology. Spectroscopic scatterometry, an optical-wavelength light-diffraction technique, is emerging as a fast, accurate, and nondestructive means of monitoring profiles. A photoresist grating pattern on an InP substrate and an etched InP grating with periods of 0.2 and 0.24 m were successfully evaluated by using unpolarized simple optical metrology. A precise grating profile evaluation technique with an accuracy of nanometers enabled us to obtain an accurate coupling coefficient ( L) for DFB laser diodes. DFB laser diodes with well-controlled L are very promising for practical use in cost-effective optical networks.

show abstract

Section: Introductionmentioning

confidence: 99%

Precise Grating Profile Evaluation for DFB Lasers Using an Optical Metrology

Muroya

Makino

Umeda

et al. 2007

IEEE Trans. Semicond. Manufact.

View full text Add to dashboard Cite

show abstract

“…The profiles monitored by OCD show a close match to X-SEM profile images. [1] As technology nodes continuously advance, the 3D applications of OCD metrology arouse more attentions in in-situ monitoring for those more complicated or 3D structures such as contact hole (CT), via hole, dual-damascene (DD), FinFET, metal gate fill/polishing, overlay and ADI of double patterning process.…”

Section: Introductionmentioning

confidence: 99%

“…To enhance the mobility of p-MOSFET, a local approach, where stress is engineered into the device by means of epitaxial layers and/or high-stress nitride capping layers, has been widely employed [1] as shown in Fig. 2.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

OCD Metrology Evaluation of p-MOS Silicon Recess with Three Dimensional Design Pattern

Huang

Han

Sui³

et al. 2012

ECS Trans.

View full text Add to dashboard Cite

OCD metrology has been proven to be a fast, accurate, and non-destructive knob for in-situ monitoring of line width and profile. In order to main Moore's law, device dimension is moving towards 45nm technology node and beyond, it is becoming increasingly difficult to perform the in-situ evaluation for those complicated structures by either CD-SEM or AFM. In this work, we come up with one specific 3D pattern to realize the 3D monitoring of p-MOS silicon recess (PSR) etch performance. The corresponding OCD library was identified and implemented on Nova OCD 3090 next. Several key floating parameters include PSR & STI depth, gate & AA CD, nitride spacer width and SWA. Good CD correlation between OCD and CD-SEM is obtained on the same 3D pattern. Consistent trench depth match is also observed between OCD and blanket pattern based AFM. Besides, dynamic repeatability test shows the acceptable reliability for 3D PSR OCD monitoring as well.

show abstract

“…The semiconductor industry has capitalized on this sensitivity to measure line widths and profiles of microfabricated structures. [1][2][3][4][5][6][7][8] Referred to as non-imaging optical critical dimension metrology (OCD), measurements generally consist of recording the reflectance or polarization as a function of incident angle or wavelength from a periodic test structure. Comparison of the measurement with a library of simulated results for a variety of different possible profiles yields the one which matches the data best.…”

Section: Introductionmentioning

confidence: 99%

Modeling the effect of line profile variation on optical critical dimension metrology

Germer

2007

SPIE Proceedings

View full text Add to dashboard Cite

We investigate the effects that variations in profile have on specular and diffuse reflectance from a grating consisting of parallel lines. We investigate, as an example, a nominal grating consisting of photoresist or silicon lines on a silicon substrate, having a vertical sidewall angle, a width of 100 nm, a pitch of 200 nm, and a height of 200 nm. We model the effects of variations by calculating the reflectance of multiple 25-line superstructures, in which the positions of the line edges are randomly modulated about their nominal profile. We study line-edge variation, line-position variation, and random edge variation in order to test the hypothesis that the reflectance of a grating with variations in line profile can be approximated by the reflectance of a grating with uniform lines having the average line profile. We find that the reflected field can be approximated by the mean field reflected by a distribution of periodic gratings and that the field does not represent the field from the average profile. When fitting results to more than one modeled parameter, the changes that are observed can be enough to shift the deduced parameter in some cases by more than the rms variation of that parameter. We also investigate the diffuse scattering by the grating by considering the diffraction orders of the 25-line period. The intensity distribution and the polarization of the diffuse scattering are found to be different for line-width variation and line-position variation.

show abstract

Line-profile and critical-dimension correlation between a normal-incidence optical CD metrology system and SEM

Cited by 7 publications

References 7 publications

Precise Grating Profile Evaluation for DFB Lasers Using an Optical Metrology

Precise Grating Profile Evaluation for DFB Lasers Using an Optical Metrology

OCD Metrology Evaluation of p-MOS Silicon Recess with Three Dimensional Design Pattern

Modeling the effect of line profile variation on optical critical dimension metrology

Contact Info

Product

Resources

About