Linewidth determination in local oxidation nanolithography of silicon surfaces

Tello, Marta; García, Fernando; Garcia, Ricardo Alexandrino

doi:10.1063/1.1501753

Cited by 28 publications

(11 citation statements)

References 27 publications

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“…This result is comparable with the precision reached with dynamic-tip LON performed on silicon [28]. The improved control over the patterning technique achieved via static-tip LON opened the door to the oxidation of ultrathin few layer TaS 2 samples (<5 nm) [15].…”

Section: Static-tip Lonsupporting

confidence: 68%

Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

et al. 2016

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Abstract:The integration of atomically-thin layers of two dimensional (2D) materials in nanodevices demands for precise techniques at the nanoscale permitting their local modification, structuration or resettlement. Here, we present the use of Local Oxidation Nanolithography (LON) performed with an Atomic Force Microscope (AFM) for the patterning of nanometric motifs on different metallic Transition Metal Dichalcogenides (TMDCs). We show the results of a systematic study of the parameters that affect the LON process as well as the use of two different modes of lithographic operation: dynamic and static. The application of this kind of lithography in different types of TMDCs demonstrates the versatility of the LON for the creation of accurate and reproducible nanopatterns in exfoliated 2D-crystals and reveals the influence of the chemical composition and crystalline structure of the systems on the morphology of the resultant oxide motifs.

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Section: Static-tip Lonsupporting

confidence: 68%

Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

et al. 2016

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“…The combination of those elements allows the fabrication of a wide range of electronic and mechanical devices with nanometer-scale features. [22][23][24][25][26][27][28][29] In some cases LON is used in combination with other methods such as photolithography, electron beam lithography or chemical wet etching to fabricate the desired device. In those cases, the critical or most relevant features of the device are fabricated by local oxidation.…”

Section: Local Oxidation Nanolithographymentioning

confidence: 99%

Nano-chemistry and scanning probe nanolithographies

García¹,

Martínez²,

Martínez³

2006

Chem. Soc. Rev.

361

306

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The development of nanometer-scale lithographies is the focus of an intense research activity because progress on nanotechnology depends on the capability to fabricate, position and interconnect nanometer-scale structures. The unique imaging and manipulation properties of atomic force microscopes have prompted the emergence of several scanning probe-based nanolithographies. In this tutorial review we present the most promising probe-based nanolithographies that are based on the spatial confinement of a chemical reaction within a nanometer-size region of the sample surface. The potential of local chemical nanolithography in nanometer-scale science and technology is illustrated by describing a range of applications such as the fabrication of conjugated molecular wires, optical microlenses, complex quantum devices or tailored chemical surfaces for controlling biorecognition processes.

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“…In particular for bias induced (b-SPL) and oxidation SPL (o-SPL) processes the achievable feature size is often smaller than the diameter of the scanning probe tipapex because non-linear interactions result in a focussed interaction cross section. Prominent examples are the room temperature manipulation of single atoms in UHV environment 2 , the creation of 3 nm half-pitch parallel lines by field induced deposition of organic material 3 , or sub 10 nm half-pitch patterning using local anodic oxidation (o-SPL) 4 . Thermal SPL (t-SPL) relies on the thermal decomposition of a thermally sensitive resist and has proven to be a high speed technique 5 capable of writing 3D relief patterns in a single patterning step 6 .…”

Section: Introductionmentioning

confidence: 99%

Sub-20 nm silicon patterning and metal lift-off using thermal scanning probe lithography

Wolf

Rawlings

Mensch

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The most direct definition of a patterning process' resolution is the smallest half-pitch feature it is capable of transferring onto the substrate. Here we demonstrate that thermal Scanning Probe Lithography (t-SPL) is capable of fabricating dense line patterns in silicon and metal lift-off features at sub 20 nm feature size. The dense silicon lines were written at a half pitch of 18.3 nm to a depth of 5 nm into a 9 nm polyphthalaldehyde thermal imaging layer by t-SPL. For processing we used a three-layer stack comprising an evaporated SiO 2 hardmask which is just 2-3 nm thick. The hardmask is used to amplify the pattern into a 50 nm thick polymeric transfer layer. The transfer layer subsequently serves as an etch mask for transfer into silicon to a depth of ≈ 65 nm. The line edge roughness (3 σ) was evaluated to be less than 3 nm both in the transfer layer and in silicon. We also demonstrate that a similar three-layer stack can be used for metal lift-off of high resolution patterns. A device application is demonstrated by fabricating 50 nm half pitch dense nickel contacts to an InAs nanowire.

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Linewidth determination in local oxidation nanolithography of silicon surfaces

Cited by 28 publications

References 27 publications

Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

Nano-chemistry and scanning probe nanolithographies

Sub-20 nm silicon patterning and metal lift-off using thermal scanning probe lithography

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