Within the present study, atomic-scale electron microscopy investigation on the crystallization behavior of polysilylcarbodiimide-derived SiCN was performed. The as-prepared SiCN sample was found to be homogeneous and consisted of amorphous silicon nitride nano-domains dispersed within an amorphous, highly entangled graphene-like carbon matrix. Annealing of the sample at 1400 • C induced a slight increase of the ordering of the carbon phase. Additionally, the crystallization onset of the silicon nitride has been observed for the first time. In the sample annealed at 1400 • C small nano-clusters with average sizes of 0.8, 1.5 and 2.1 nm (consisting of 30, 180 and 570 atoms, respectively; corresponding to Si 12 N 18 , Si 72 N 108 and Si 228 N 342 ) were imaged and assigned to ␣-silicon nitride. The crystallization of the amorphous silicon nitride phase into ␣-Si 3 N 4 is thought to occur via diffusion of Si and N, which rely on the presence of large number of dangling bonds in the amorphous SiCN sample.