Logic Process Compatible 40nm 256K×144 Embedded RRAM with Low Voltage Current Limiter and Ambient Compensation Scheme to Improve the Read Window

Lai, Ching-Ming; Chou, Chung-Cheng; Weng, Chi-Hsiang; Lin, Zheng-Jun; Tseng, Pei-Ling; Wang, Chien-Fan; Wang, Chih-Chen; Su, Chun Jung; Chen, Wei-Chi; Lin, Yu‐Cheng; Ong, Tong-Chern; Chang, Chih‐Yung; Chih, Yu-Der; Chang, Tsung-Yung Jonathan

doi:10.1109/asscc.2018.8579345

Cited by 3 publications

(1 citation statement)

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“…This will result in deterministic spatial variations of device characteristics as examples shown in [38]. To compensate for the impact of cell locations, location-aware write schemes such as [39] can adjust the programming pulses based on the cell locations. The results presented in this work should be seen as a starting point, as there is ample room for improvement.…”

Section: Discussion and Summarymentioning

confidence: 99%

High-density analog image storage in an analog-valued non-volatile memory array

Zheng

Zarcone²,

Levy³

et al. 2022

Neuromorph. Comput. Eng.

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Data stored in the cloud or on mobile devices reside in physical memory systems with finite sizes. Today, huge amounts of analog data, e.g. images and videos, are first digitalized and then compression algorithms (e.g., the JPEG standard) are employed to minimize the amount of physical storage required. Emerging non-volatile-memory (NVM) technologies (e.g., phase change memory (PCM), resistive RAM (RRAM)) provide the possibility to store the analog information in a compressed format directly into analog memory systems. Here, we demonstrate with hardware experiments an image storage and compression scheme (joint source-channel coding) with analog-valued PCM and RRAM arrays. This scheme stores information in a distributed fashion and shows resilience to the PCM and RRAM device technology non-idealities, including defective cells, device variability, resistance drift, and relaxation.

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Section: Discussion and Summarymentioning

confidence: 99%