Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Abstract

Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm 2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates. OPEN ACCESSPhotonics 2015, 2 647

Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes

“…Furthermore, low-cost solution processability and flexibility are also appealing properties of QDs to enable next-generation displays. Based on these advantages, the various QDs comprised of II-VI [8,9], III-V [10][11][12], IV [13,14], perovskite [15,16], are actively developing for display application.…”

O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate

“…Most reported studies of III-V QD lasers were grown on 2-6 • offcut Ge or Si towards [110] substrates to prevent the formation of APDs [36][37][38][39][40][41][42][43]45,46,66,67]. Unfortunately, offcut Ge or Si substrates are not fully compatible with standard CMOS processing foundries, and it may hinder the viability of InAs QD lasers as light emitters for silicon photonics.…”

“…The 4% (7.5%) lattice mismatch between GaAs (InP) and Si makes direct growth of high-quality GaAs (InP) on Si very difficult, resulting in high dislocation densities on the order of (>10 9 -10 10 cm −2 ). In addition, the difference in the coefficient of thermal expansion between III-V and IV materials could promote the accumulation of thermal stress, which then leads to thermal micro-cracks in the epilayer while the wafer is cooled down from the growth temperature to room temperature (RT).There have been many researches carried out on the monolithic growth of InAs/GaAs quantum-dot (QD) lasers on Si substrates in the last few years, including techniques such as offcut Si (001) substrates, Ge/Si virtual substrates, hydrogen annealing process, intermediate GaP buffer, and V-grooved Si substrates [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51]. However, most of the above techniques suffer from high defect density and thermal mismatch-induced material degradation.…”

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

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