Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5 V single voltage supply

Abstract

A l o w current dissipation MMIC power amplifier operating with a 3.5V single voltage supply has been developed f o r PHS. This MMIC utilizes a pseudomorphic double he teroj m c t i on mo dul at ion doped FET (P-MODFET) to realize single voltage operation andlow operating culrent simultaneously. It exhibits very l o w operating current o f 141mA at the output power o f 21.5dBm with l o w adjacent channel leakage power o f -5 6 . l d B c in the single voltage supply condition. This operating current i s one o f the lowest values that have been reported o n the single voltage operation MMIC power amplifiers for PHS.

High-efficiency and low-distortion directly-ion-implanted GaAs power MESFETs for digital personal handy-phone applications

“…Recently, epitaxy-grown power HEMT's, including 3.5-V-operation conventional AlGaAs/InGaAs HEMT's (PAE 34.2%) [2] and 3-V-operation GaAs/InGaAs HEMT's (PAE 53%) [3], exhibited good performance for PHS applications. However, the epitaxial devices have the disadvantages of complicated epitaxy structure, difficult uniformity control, and high wafer costs, which cause negative impact on manufacturing yields and production costs.…”

“…When the operating voltage of the MESFET dropped to 2.0 V, the PAE was 55.8% and the was 52 dBc at a of 20 dBm. The specifications of PHS handsets require a of 19 dBm with a less than 50 dBc for signal transmission[2]. The 2.2-V-operation DII GaAs power MESFET demonstrated excellent power performance for power amplifiers of PHS handsets and provided sufficient margin for loss and degradation of circuits.…”