Low frequency noise characteristics in multilayer WSe2 field effect transistor

Cho, In-Tak; Kim, Jong In; Hong, Yongtaek; Roh, Jeongkyun; Shin, Hyeonwoo; Baek, Geun Woo; Lee, Changhee; Hong, Byung Hee; Jin, Sung Hun; Lee, Jong-Ho

doi:10.1063/1.4906141

Cited by 34 publications

(16 citation statements)

References 25 publications

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“…The low‐frequency electrical noise characteristics of most semiconductor devices obey the Hooge empirical law, and the agreement is independent of the noise origins. The noise spectral density S I with β = 1 presents a 1/ f spectrum, which is commonly observed in the various channel materials at low frequencies, including the prototype 2D materials of graphene and the single‐layer TMDs . The noise characterizations of the PE‐free samples are presented in Figure b and c. Figure b shows S I – f (with log scales) over a low‐frequency span of 1–800 Hz for the various drain bias V D (see Figure S5 in the Supporting Information for the details of current noise analyzing method).…”

mentioning

confidence: 96%

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Wang

Liu

Chen

et al. 2017

Adv Elect Materials

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and unique band structures. [1] Semiconducting monolayers of the TMDs, such as MoS 2 and WSe 2 , possess a direct band gap and excellent photoresponsivity. [2,3] In addition, single-layer MoS 2 is moderately easy to attain Ohmic contact with various metals [4][5][6][7] and graphene, [8] and the singlelayer MoS 2 field-effect transistors (FETs) show decent performances on the mobility (tens of cm 2 V −1 s −1 ) [9,10] and the on-off current ratio (exceeding 10 8 ) [4,10] at room temperature, suggesting that the monolayer MoS 2 holds greater potential for flexible nanodevices and optoelectronic applications. The huge surface-to-volume ratio of the atomically thin TMDs makes their performances extremely sensitive to the surface and interface conditions. The low-frequency electrical noise of devices often discloses the influences from the surface [11] and the interface conditions and has been widely adopted as a nondestructive tool to study the interface conditions. The subthreshold slope of the FETs and the photo response time of the MoS 2 photodetectors are significantly determined by the interfacial traps. [12] Unlike the thermal noise and shot noise that possess a constant power spectral density, low-frequency noise typically has a 1/f spectrum, and its effect on the accuracy of a device cannot be reduced by increasing the averaging time. [13] Such noise manner causes a critical issue of applications of the TMDs in the signal sensing and processing, [14] and raises numerous interests in investigating the 1/f noise in the TMD-based devices for identifying its origin and for reducing its strength.The first study of low-frequency electrical noise in exfoliated monolayer MoS 2 [15] claimed that the noise has a 1/f spectrum and is mainly explained by fluctuation of the mobility. By contrast, the 1/f noise in the exfoliated MoTe 2[16] with the ambipolar transport behaviors and many other TMD FETs [17][18][19][20] is further described as fluctuation of the carrier density. Finding a clear picture of the possible factors contributing to the 1/f noise, including the external adsorbates on the devices, [15] the defect states at the metal/TMD contacts, [17] and the trappingdetrapping centers in the substrate near the TMD channel, [18,21] remains a challenging issue because of the lack of Ohmic contacts, ideal material quality, and an effective control of the carrier density. Recently, the high-quality chemical-vapor-deposited (CVD) MoS 2 monolayers show the comparable electrical

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confidence: 96%

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Wang

Liu

Chen

et al. 2017

Adv Elect Materials

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“…4(a) shows that the noise power spectral densities (S ID ) versus drain current has a linear relationship at various temperature (25 o C ~ 75 o C). In our previous report [9], the carrier mobility fluctuation is main mechanism of LFN in multilayer WSe 2 FETs at room temperature. Although LFN measure at different temperature, the mechanism of LFN is not changed.…”

Section: Introductionmentioning

confidence: 82%

Temperature effects on current-voltage and low frequency noise characteristics of multilayer WSe<inf>2</inf> FETs

Cho

Kang

Roh

et al. 2015

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits

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We investigates the temperature effect on current-voltage and low frequency noise of multilayer WSe 2 FETs. The field effect mobility (μ FE ), I on / I off , subthreshold slope (SS) and hysteresis were deteriorated as the temperature increases. It is because of enhanced phonon scattering and increase of thermally generated carrier density. From the dependence of noise power spectral density of drain current, carrier mobility fluctuation is considered as a dominant low frequency noise mechanism. The extracted Hooge`s parameter slightly increased with temperature increase. It is because of enhanced phonon scattering

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“…Among 2D materials, graphene was the first to be studied in detail but despite high room temperature (RT) electrical conductivity and mobilities (μ), , its semimetallic nature restricts its use as a transistor switch. Transition-metal dichalcogenides, such as MoS 2 , WS 2 , etc., have been proposed as an alternative to graphene for the FET channel layer in FETs. − However, these materials suffer from significantly lower carrier mobilities , in comparison with graphene as well as conventional strained Si , due to the presence of a large band gap. The recently explored black phosphorus (BP) is a buckled 2D van der Waals semiconductor and the most stable allotrope of phosphorus. , Its high hole mobility of nearly 1000 cm 2 V –1 s –1 − and considerable band gap, varying from 0.3–2 eV depending on the number of layers, makes it a suitable channel material for p-FETs …”

Section: Introductionmentioning

confidence: 99%

Accurate Threshold Voltage Reliability Evaluation of Thin Al₂O₃ Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses

Goyal

Parihar

Jawa

et al. 2019

ACS Appl. Mater. Interfaces

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Few-layer black phosphorus (BP) has attracted significant interest in recent years due to electrical and photonic properties that are far superior to those of other two-dimensional layered semiconductors. The study of long term electrical stability and reliability of black phosphorus field effect transistors (BP-FETs) with technologically relevant thin, and device-selective, gate dielectrics, stressed under realistic (closer to operation) bias and measured using state-of-the-art ultrafast reliability characterization techniques, is essential for their qualification and use in different applications. In this work, air-stable BP-FETs with a thin top-gated dielectric (15 nm Al2O3, SiO2 equivalent thickness of 5 nm) were fabricated and comprehensively characterized for threshold voltage (V th) instability under negative gate bias stress at various measurement delays (t m), stress biases (V GSTR), temperatures (T), and stress times (t str) for the first time. Thin top-gated oxide enables low V GSTR that is closer to the operating condition and ultrafast V th measurements with low delay (t m = 10 μs, due to high drain current) that ensure minimal recovery. The resultant time kinetics of V th degradation (ΔV th) shows fast saturation at longer stress times and low-temperature activation energy. V th instability in these top-gated devices is suggested to be dominated by hole trapping, which is modeled using first-order equations at different V GSTR and T. It is shown that measurements using larger t m show lower degradation magnitude that do not saturate due to recovery artifacts and give inaccurate estimation of hole trap densities. Conventional, thick, and global back-gated oxide BP-FETs were also fabricated and characterized for varying t m (1 ms being the lowest due to a low drain current level for thick oxide), V GSTR, and T to benchmark our top-gated results. Nonsaturating ΔV th in the back-gated devices is shown to result from recovery artifacts due to the large t m (1 ms and greater) values. Finally, using a V GSTR and T-dependent first-order model, we show that the top-gated Al2O3 BP-FETs with scaled gate oxide thickness can match state-of-the-art Si reliability specifications at operating voltage and room/elevated temperature.

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Low frequency noise characteristics in multilayer WSe2 field effect transistor

Cited by 34 publications

References 25 publications

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Temperature effects on current-voltage and low frequency noise characteristics of multilayer WSe<inf>2</inf> FETs

Accurate Threshold Voltage Reliability Evaluation of Thin Al₂O₃ Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses

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Low frequency noise characteristics in multilayer WSe2 field effect transistor

Cited by 34 publications

References 25 publications

Controlled Low‐Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration

Controlled Low‐Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration

Temperature effects on current-voltage and low frequency noise characteristics of multilayer WSe<inf>2</inf> FETs

Accurate Threshold Voltage Reliability Evaluation of Thin Al2O3 Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses

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Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

Accurate Threshold Voltage Reliability Evaluation of Thin Al₂O₃ Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses