Low-k interconnect stack with metal-insulator-metal capacitors for 22nm high volume manufacturing

Ingerly, D.; Agrawal, Ankur; Ascazubi, Ricardo; Blattner, A.; Buehler, Markus J.; Chikarmane, V.; Choudhury, B. B.; Cinnor, F.; Ege, Canay; Ganpule, C. S.; Glassman, Timothy E.; Grover, R.; Hentges, P.; Hicks, J.; Jones, Derick; Kandas, A.; Khan, Haseeb A.; Lazo, N.; Lee, K. S.; Liu, H.; Madhavan, Advait; McFadden, R.S.; Mule, T.; Parsons, D.; Parthangal, Prahalad M.; Rangaraj, Sudarshan; Rao, D. Srinivas; Roesler, Joachim; Schmitz, A.; Sharma, Monika; Shin, Jinho; Shusterman, Y.; Speer, N.; Tiwari, Pramod Kumar; Wang, G.; Yashar, P.; Mistry, K.

doi:10.1109/iitc.2012.6251663

“…The ∆V th s in the various process corners are properly assumed to be between 35 and 50 mV according to process corners [7]. In addition, the interconnect capacitance is set to 0.16fF/μm [16], and the gate-to-source or drain capacitance and junction capacitance in source or drain are set to 0.252 fF/μm [17] and 0.72 fF/μm 2 [18], respectively.…”

Section: A Simulation Setupmentioning

confidence: 99%

Transient Cell Supply Voltage Collapse Write Assist Using Charge Redistribution

Kim

¹

,

Jeong

²

,

Park

³

et al. 2016

IEEE Trans. Circuits Syst. II

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 Abstract-This paper describes a charge redistribution transient cell supply voltage collapse write assist (CR-TVC-WA) for static random access memory. Although wordline underdrive read assist (WLUD-RA) is a requisite for stable read operations in deep submicrometer technologies, it significantly degrades the write ability. To overcome this problem, a transient cell supply voltage (VDD,CELL) collapse WA (TVC-WA) method is widely used, but this consumes a large amount of energy. In the proposed CR-TVC-WA, the virtual cell supply and ground nodes are temporarily floated and connected to each other during the write operation. This improves the write ability and significantly reduces energy consumption. Simulation results indicate that the minimum operation voltage (VMIN) is approximately 660 mV when write operation is performed at 1 GHz, and the extra write energy consumption (3.8 fJ) additionally required to satisfy the target yield (6σ) is reduced by 46% compared with that in the conventional TVC-WA (7.0 fJ). Index Terms-FinFET SRAM, write assist circuit, energy efficient assist technique. CVDD BLb BL WL PU2 PU1 PD1 PG1

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“…In this work backside laser exposure is used because the interconnect layers present in Intel's 22nm/32nm technology nodes [10] are very dense. For this reason front side optical injection is not viable on the current CMOS fully integrated manufacturing processes .…”

Section: B Laser Datamentioning

confidence: 99%

Laser-assisted SER estimation in advanced CMOS technologies

Ascazubi

¹

,

Modoran

²

,

Gill

³

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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“…To reduce the effective capacitance (k eff ) in the copper backend interconnection, low-k etch-stop/ dielectric barrier materials such as silicon carbonitride (SiC x N y ) (k = 4.5-5.5) [2] have been introduced in 45 nm nodes and beyond, following the implementation of low-k inter-layer dielectric (ILD) materials such as carbon-doped oxide and ultra-low-k dielectrics [3] and the scaling of their thickness [4,5]. Silicon carbonitride films have been typically prepared using plasma-enhanced chemical vapor deposition (PECVD) of multi-precursors such as SiH 4 + NH 3 (or N 2 ) + CH 4 [6,7] and SiH(CH 3 ) 3 + NH 3 [8].…”

Section: Introductionmentioning

confidence: 99%

“…To reduce the effective capacitance (k eff ) in the copper backend interconnection, low-k etch-stop/ dielectric barrier materials such as silicon carbonitride (SiC x N y ) (k = 4.5-5.5) [2] have been introduced in 45 nm nodes and beyond, following the implementation of low-k inter-layer dielectric (ILD) materials such as carbon-doped oxide and ultra-low-k dielectrics [3] and the scaling of their thickness [4,5]. Silicon carbonitride films have been typically prepared using plasma-enhanced chemical vapor deposition (PECVD) of multi-precursors such as SiH 4 + NH 3 (or N 2 ) + CH 4 [6,7] and SiH(CH 3 ) 3 + NH 3 [8]. Recently, single source precursors such as hexamethyldisilazane (HMDS) [9,10], and BASICN TM [11] have been examined for use in low-k SiC x N y applications, because compared with multi-precursors, single source precursors retain higher C content to achieve lower polarizability and improved etch selectivity.…”

Section: Introductionmentioning

confidence: 99%