Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

Abstract

An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD=−40 V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction.

Optical and electrical characteristics of GaAs/InGaAs quantum-well device

“…Lattice mismatch between GaAs and InGaAs can be accommodated by elastic strain rather than by generating misfit dislocations, if epi-layer thickness [3,4] is precisely controlled. The main breakthrough of the heterostructure devices lies in the introduction of the two more advanced epitaxial growth techniques: molecular beam epitaxy (MBE) [5][6][7][8] and metalorganic chemical vapor deposition (MOCVD) [9][10][11][12]. The delta-doped structure can maintain an extremely high doping level within an atomic region and thus forms a V-shaped quantum well.…”