Low Operating Voltage and Small Gain Slope of InGaAs APDs With p-Type Multiplication Layer

Ma, Yingjie; Zhang, YG; Yuan, Gu; Chen, Xingyou; Li, Zhou; Xi, Suping; Li, Haosibaiyin

doi:10.1109/lpt.2015.2389819

Cited by 13 publications

(6 citation statements)

References 20 publications

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“…Third, the large conduction-band offset of the InGaAs/InAlAs system enables a strong electron confinement and subsequently a high-temperature stability and a high-speed modulation capability for InGaAs/InAlAs devices [14, 15]. This makes these structures very attractive and suitable for quantum cascade lasers, inter-subband detectors, and devices based on nonlinear optical properties [16–18]. In addition, the small electron effective mass, the small band gap, and the high electron mobility of InGaAs alloys are important for the development of high electron mobility transistors, high-speed detectors, modulators, and THz emitters [19–22].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

et al. 2017

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Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV, and a clear transition of the spectral profile with the laser excitation intensity increasing four orders in magnitude. The 7-nm QW PL also has a larger blueshift and FWHM variation than the 15-nm QW as the temperature increases from 10 to ~50 K. Finally, simulations of this system which correlate with the experimental observations indicate that a thin QW must be more affected by interface fluctuations and their resulting potential fluctuations than a thick QW. This work provides useful information on guiding the growth to achieve optimized InGaAs/InAlAs QWs for applications with different QW thicknesses.

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Section: Introductionmentioning

confidence: 99%

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

et al. 2017

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“…3, the punchthrough voltage (at the unity gain point: the bias where the responsivity of APD reaches ~0.6 A/W) increases monotonically with the increasing of doping concentration (4 × 10 16 ~ 1.5 × 10 16 cm −3 ), [14] while the breakdown voltage (dark current ~ 1 × 10 −5 A) decreases monotonically. With the change of the doping concentration, the electric field in the multiplication layer changes obviously.…”

Section: Resultsmentioning

confidence: 99%

“…To get smaller dark currents, larger breakdown voltage, and larger gain factor, the doping of absorption layer is relatively higher [14]. From Eq.…”

Section: Resultsmentioning

confidence: 99%

Optimization of InGaAs/InAlAs Avalanche Photodiodes

et al. 2017

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In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.

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“…Here, low dark current and low required bias voltage would be desirable. A number of other groups (e.g., ) published APD structures optimized for different applications. However, in most cases either bias voltages of the order of 25–70 V are necessary to achieve

M = 10

or dark‐current densities are significantly larger than for our structures.…”

Section: Resultsmentioning

confidence: 99%

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Phys. Status Solidi A

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We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) imaging applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading, charge, and multiplication (SAGCM) layers. Special attention has been paid to the charge layer in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Hereof, a combination of a p-type grading layer and charge layer is presented. Band-edge profile calculations as well as electro-optical characterization results of the APDs will be discussed in this article. Our optimized APD structures reveal low punch-through and low breakdown voltage of V-pt approximate to 8.5 V and V-bd approximate to 2.3 V, respectively. A maximum gain of M > 300 in the linear operation mode is demonstrated at room temperature and M = 10 has been measured at 20 V bias

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Low Operating Voltage and Small Gain Slope of InGaAs APDs With p-Type Multiplication Layer

Cited by 13 publications

References 20 publications

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Optimization of InGaAs/InAlAs Avalanche Photodiodes

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

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