Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

Scholz, F.; Härle, V.; Bolay, H.; Steuber, F.; Kaufmann, B.; Reyher, G.; Dörnen, A.; Gfrörer, O.; Im, Saemi; Hangleiter, A.

doi:10.1016/s0038-1101(96)00154-2

Cited by 32 publications

(5 citation statements)

References 12 publications

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“…Undoped AlN, GaN, and Al x Ga 1-x N epilayers (x = 0.17, 0.28, 0.5), and Si-doped n-type GaN epilayers with wurtzite structure ([ 0 0 0 1 ] || to the substrate normal) were grown by MOVPE on c-plane sapphire [25], [26], [27]. TEGa, TMAl, and ammonia were used as precursors.…”

Section: Methodsmentioning

confidence: 99%

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry

Schubert

Kasic

Tiwald

et al. 1999

MRS Internet j. nitride semicond. res.

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We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavenumbers from 333cm -1 to 1200cm -1 as a novel approach to non-destructive optical characterization of free-carrier and optical phonon properties of group III-nitride heterostructures. Undoped α -GaN, α -AlN, α -Al x Ga 1-x N ( x = 0.17, 0.28, 0.5), and n -type silicon (Si) doped α -GaN layers were grown by metalorganic vapor phase epitaxy (MOVPE) on c -plane sapphire ( α -Al 2 O 3 ). The four-parameter semiquantum (FPSQ) dielectric lattice-dispersion model and the Drude model for free-carrier response are employed for analysis of the IR-SE data. Model calculations for the ordinary ( ∈ ⊥ ) and extraordinary ( ∈ || ) dielectric functions of the heterostructure components provide sensitivity to IRactive phonon frequencies and free-carrier parameters. We observe that the α -Al x Ga 1-x N layers are unintentionally doped with a back ground free-carrier concentration of 1-4 10 18 cm -3 . The ternary compounds reveal a two-mode behavior in ∈ ⊥ , whereas a one-mode behavior is sufficient to explain the optical response for ∈ || . We further provide a precise set of model parameters for calculation of the sapphire infrared dielectric functions which are prerequisites for analysis of infrared spectra of III-nitride heterostructures grown on α -Al 2 O 3 .

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Section: Methodsmentioning

confidence: 99%

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry

Schubert

Kasic

Tiwald

et al. 1999

MRS Internet j. nitride semicond. res.

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“…The growth was performed by low pressure metalorganic vapor phase epitaxy in a horizontal reaction tube at a pressure of 100 mbar using standard metalorganic precursors and NH 3 as nitrogen source [8]. The samples were grown on the [0001]-plane of sapphire or SiC.…”

Section: Methodsmentioning

confidence: 99%

Investigations on the V-Defect Formation in GaInN-GaN Multi Quantum Well Structures

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Scholz

Ehrenbacher

et al. 1999

phys. stat. sol. (b)

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“…III-nitride wide band-gap semiconductors have drawn a lot of attraction because of their potential applicability to produce optoelectronic devices such as blue-green light emitting diodes (LEDs), laser diodes (LDs), and visible-blind photodetectors as well as high-power and high-temperature electronic devices [1]. Although the growth of the high-quality GaN epilayers is necessary to obtain good electrical and optical characteristics, highbrightness LEDs which have high dislocation density of 1 Â 10 10 cm À2 were achieved [2].…”

Section: Introductionmentioning

confidence: 99%

Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage

Kim

Kang

et al. 2004

Journal of Crystal Growth

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Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

Cited by 32 publications

References 12 publications

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry

Investigations on the V-Defect Formation in GaInN-GaN Multi Quantum Well Structures

Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage

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Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

Cited by 32 publications

References 12 publications

Optical phonons and free-carrier effects in MOVPE grown AlxGa1−xN measured by Infrared Ellipsometry

Optical phonons and free-carrier effects in MOVPE grown AlxGa1−xN measured by Infrared Ellipsometry

Investigations on the V-Defect Formation in GaInN-GaN Multi Quantum Well Structures

Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage

Contact Info

Product

Resources

About

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1−xN measured by Infrared Ellipsometry