Low-Temperature Atmospheric-Pressure-Plasma Jet for Thin-Film Deposition

Huang, Chun; Hsu, Wen-Tung; Liu, Chi‐Hung; Wu, Shu‐Chen; Yang, Shanmin; Chen, Tai-Hung; Wei, Ta‐Chin

doi:10.1109/tps.2008.2011636

Cited by 30 publications

(3 citation statements)

References 7 publications

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“…Plasmas ignited in He:O 2 mixtures are technologically relevant and used in a variety of applications: surface modification [1][2][3], thin film deposition [4], microbial decontamination of food [5,6] and applications in biomedicine [7,8]. The latter field has received significant research interest and atmospheric pressure plasma (APP) sources, particularly APP jets [9][10][11], have been successfully applied for inactivating microorganisms [12,13], wound healing [14,15], dentistry [16,17] and cancer therapy [18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Determination of the apparent effective ionization coefficient in mixtures of He and O₂ using steady-state Townsend discharge: effect of penning ionization and attachment

Talviste

Erme²,

Paris³

et al. 2023

Phys. Scr.

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He:O2 gas mixtures are popular in many non-thermal plasma applications because of the good thermal conductivity of He and high production of reactive oxygen species. The applications utilizing reactive oxygen species, in particular, applications in biomedicine require accurate knowledge of the fundamental ionization parameters of gases such as the ionization coefficient. This study was focused on experimental determination of the reduced apparent effective ionization coefficient αea/N in He:O2 mixtures. Experiments were conducted in the absolute pressure range of 10 - 800 Torr and reduced electric field E/N range of 40 - 1000 Td utilizing a steady-state non-self-sustaining Townsend discharge. Experimental results were compared with a theoretical model which was based on BOLSIG+ calculation of ionization and attachment coefficients and additionally considered the ion conversion of O- to O2-, detachment from O2- and formation of O3- and Penning ionization by He metastable species. The measurements agreed reasonably well with model calculations. Comparison with model suggest that He metastable species affect net ionization in He:O2 mixtures with O2 concentrations up to 10% often encountered in the applications and thus should be included in models of atmospheric pressure plasmas. The attachment of electrons became important at O2 concentrations above 10% and is therefore less important in most applications.

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Section: Introductionmentioning

confidence: 99%

Determination of the apparent effective ionization coefficient in mixtures of He and O₂ using steady-state Townsend discharge: effect of penning ionization and attachment

Talviste

Erme²,

Paris³

et al. 2023

Phys. Scr.

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show abstract

“…Nevertheless, most of the prior studies have focused on the deposition of inorganic oxide (e.g., SiO 2 and TiO 2 ) and carbon (e.g., diamond‐like carbon) films. [ 4–11 ] Others have deposited copper from various sources but used a high‐power radiofrequency (RF) discharge. [ 12–14 ] Dey et al [ 15 ] used an ambient pressure dielectric barrier discharge (DBD) jet with copper oxide nanoparticles as a copper source.…”

Section: Introductionmentioning

confidence: 99%

Copper film deposition using a helium dielectric barrier discharge jet

Tsai

McIntyre

Burnette

et al. 2020

Plasma Processes & Polymers

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This study demonstrates that plasma-enhanced chemical vapor deposition of copper films can be achieved in ambient air and at low temperature. A helium dielectric barrier discharge jet with a small mixture of hydrogen and copper(II) acetylacetonate vapor is utilized as the nonthermal plasma source to deposit conductive copper films with low electrical resistivity (<1 × 10 −7 Ω•m). The deposited film appears to have three distinct regions (reddish brown, dark blue, and yellowish) from center to edge. Copper nanograins (~50 nm) are observed in both the reddish-brown and the dark-blue regions, whereas the yellowish region exhibits a continuous structure containing copper oxide. The copper films are further deposited on various temperature-sensitive substrates, including plastic, cardboard, agar, and pork skin. K E Y W O R D S atmospheric-pressure nonthermal plasma jet, copper(II) acetylacetonate, dielectric barrier discharge, plasma-enhanced chemical vapor deposition, thin films

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“…The APPJ system does not need expensive vacuum systems and maintenance which are necessary for low pressure plasma deposition systems. [8][9][10][11] The surface morphology and electro-optical characteristics of the films can be effectively controlled by the haze of organosilicon underlayers. The performance of superstrate-type a-Si:H solar cells fabricated on the different textured GZO front contacts is examined by current-voltage measurements.…”

mentioning

confidence: 99%

Cost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cells

Yu¹,

Ho²,

Lin³

et al. 2013

Appl. Phys. Express

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We adopt a economical and original method to fabricate self-textured gallium-doped zinc oxide (GZO) front contacts for hydrogenated amorphous silicon (a-Si:H) single-junction solar cells. This technique involves an atmospheric-pressure plasma jet (APPJ) and a dc sputtering process. The electro-optical characteristics of the textured GZO films are mainly controlled by the haze of organosilicon underlayers deposited by the APPJ. The films exhibit an average optical transmittance of about 80% and resistivity below 9:91 Â 10 À4 cm. Moreover, compared with flat solar cells, textured cells fabricated on moderate GZO front contacts show 7.9 and 10.9% enhancements in conversion efficiency and short-circuit current density, respectively.

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Low-Temperature Atmospheric-Pressure-Plasma Jet for Thin-Film Deposition

Cited by 30 publications

References 7 publications

Determination of the apparent effective ionization coefficient in mixtures of He and O₂ using steady-state Townsend discharge: effect of penning ionization and attachment

Determination of the apparent effective ionization coefficient in mixtures of He and O₂ using steady-state Townsend discharge: effect of penning ionization and attachment

Copper film deposition using a helium dielectric barrier discharge jet

Cost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cells

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Low-Temperature Atmospheric-Pressure-Plasma Jet for Thin-Film Deposition

Cited by 30 publications

References 7 publications

Determination of the apparent effective ionization coefficient in mixtures of He and O2 using steady-state Townsend discharge: effect of penning ionization and attachment

Determination of the apparent effective ionization coefficient in mixtures of He and O2 using steady-state Townsend discharge: effect of penning ionization and attachment

Copper film deposition using a helium dielectric barrier discharge jet

Cost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cells

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Product

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Determination of the apparent effective ionization coefficient in mixtures of He and O₂ using steady-state Townsend discharge: effect of penning ionization and attachment

Determination of the apparent effective ionization coefficient in mixtures of He and O₂ using steady-state Townsend discharge: effect of penning ionization and attachment