Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors

Ding, Yanan; Wang, Chao; Xin, Zhijie; Cui, Youchao; Wang, Zhen; Liu, Guoxia; Shan, Fukai

doi:10.1109/led.2020.2964318

Cited by 24 publications

(14 citation statements)

References 32 publications

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“…Usually, the reaction process that produces oxygen vacancies is slow, having been estimated to tens of minutes in literature reports. [58,59] By the end of the first minute (60 s), most of the hydroxyl groups have reacted and oxygen vacancies have begun to get filled by free oxygen atoms. During the next 4 min (until 300 s), the oxygen atoms continue to fill the existing oxygen vacancies and convert them into M-O-M groups.…”

Section: Chemical Structural Characterization Of Mo Filmsmentioning

confidence: 99%

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Tang

Dacha

Haase

et al. 2022

Adv Funct Materials

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Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution bladecoating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO 2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm 2 V −1 s −1 , respectively. The devices show an excellent on/off ratio (>10 6 ), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlO x dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm 2 V −1 s −1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm 2 V −1 s −1 ) and IZI-TFTs (over 38 cm 2 V −1 s −1 ) using MO semiconductor layers annealed at 300 °C are achieved.

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Section: Chemical Structural Characterization Of Mo Filmsmentioning

confidence: 99%

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Tang

Dacha

Haase

et al. 2022

Adv Funct Materials

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“…High-energy UV photons can induce the photochemical cleavage of alkoxy groups in the PVP molecular chain, which makes the as-electrospun NFs highly condensed and densified, resulting in a good adhesion to the interface. 22,23 Furthermore, annealing can not only further remove the PVP, but also promote the formation of MO. Generally, MO produced from conventional metallic precursors are formed through steps such as decomposition, hydrolysis, and condensation.…”

Section: Fabrication and Characterization Of Inpro Nfsmentioning

confidence: 99%

Low-temperature fabrication of Pr-doped In₂O₃ electrospun nanofibers for flexible field-effect transistors

et al. 2022

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“…[ 16–18 ] Metal‐oxide semiconductors especially zinc oxide(ZnO) play an important role in such types of synaptic FETs due to the high intrinsic carrier mobility, good electrical homogeneity, and low manufacturing cost. [ 19–21 ]…”

Section: Introductionmentioning

confidence: 99%

“…[16][17][18] Metal-oxide semiconductors especially zinc oxide(ZnO) play an important role in such types of synaptic FETs due to the high intrinsic carrier mobility, good electrical homogeneity, and low manufacturing cost. [19][20][21] Nowadays, most of the synaptic transistors research is focused on the demonstration of desired synaptic functions instead of the further investigation of the relation between the underneath mechanisms and the top-level synaptic behaviors. Thus, demand for deeper exploration of devices' properties has become increasingly imperious for artificial synapses with higher performance and more functionality.…”

mentioning

confidence: 99%

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing

Guo

Dun

et al. 2022

Adv Funct Materials

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Biological synapses are the operational connection of the neurons for signal transmission in neuromorphic networks and hardware implementation combined with electrospun 1D nanofibers have realized its functionality for complicated computing tasks in basic three‐terminal field‐effect transistors with gate‐controlled channel conductance. However, it still lacks the fundamental understanding that how the technological parameters influence the signal intensity of the information processing in the neural systems for the nanofiber‐based synaptic transistors. Here, by tuning the electrospinning parameters and introducing the channel surface doping, an electrospun ZnO nanofiber‐based transistor with tunable plasticity is presented to emulate the changing synaptic functions. The underlying mechanism of influence of carrier concentration and mobility on the device's electrical and synaptic performance is revealed as well. Short‐term plasticity behaviors including paired‐pulse facilitation, spike duration‐dependent plasticity, and dynamic filtering are tuned in this fiber‐based device. Furthermore, Perovskite‐doped devices with ultralow energy consumption down to ≈0.2554 fJ and their handwritten recognition application show the great potential of synaptic transistors based on a 1D nanostructure active layer for building next‐generation neuromorphic networks.

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Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors

Cited by 24 publications

References 32 publications

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Low-temperature fabrication of Pr-doped In₂O₃ electrospun nanofibers for flexible field-effect transistors

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing

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Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors

Cited by 24 publications

References 32 publications

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Low-temperature fabrication of Pr-doped In2O3 electrospun nanofibers for flexible field-effect transistors

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing

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Low-temperature fabrication of Pr-doped In₂O₃ electrospun nanofibers for flexible field-effect transistors