Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications

Rath, J.K.

doi:10.1016/s0927-0248(02)00258-1

Cited by 181 publications

(94 citation statements)

References 138 publications

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“…We distinguish between type I and type II material, which in many, but not all, aspects is equivalent to porous (type I) and compact (type II) material. We have to point out that this classification is not intended to be equivalent with the 'poly I' and 'poly II' type material reported in [27]. The classification is used here only for an easier description of the experimental results.…”

Section: Resultsmentioning

confidence: 99%

Stability of microcrystalline silicon for thin film solar cell applications

Finger¹,

Carius²,

Dylla³

et al. 2003

IEE Proc., Circuits Devices Syst.

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The development of microcrystalline silicon (mc-Si:H) for solar cells has made good progress with efficiencies better than those of amorphous silicon (a-Si:H) devices. Of particular interest is the absence of light-induced degradation in highly crystalline mc-Si:H. However, the highest efficiencies are obtained with material which may still include a-Si:H regions and lightinduced changes may be expected in such material. On the other hand, material of high crystallinity is susceptible to in-diffusion of atmospheric gases which, through adsorption or oxidation, affect the electronic transport. Investigations are presented of such effects concerning the stability of mcSi:H films and solar cells prepared by plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition.

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Section: Resultsmentioning

confidence: 99%

Stability of microcrystalline silicon for thin film solar cell applications

Finger¹,

Carius²,

Dylla³

et al. 2003

IEE Proc., Circuits Devices Syst.

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“…Today, industrial reactors are capable of uniformly coating glass plates of more than 4 m 2 [12]. In parallel to the standard RF glow discharge technique, various excitation frequencies, from DC to VHF and microwave, as well as the use of a hot-wire to dissociate the gas precursors [13], have been developed to deposit amorphous and microcrystalline silicon thin films. Figure 2 summarizes the various species present in a PECVD process and thus possible contributors to microcrystalline silicon deposition.…”

Section: Plasma Processes and Growth Speciesmentioning

confidence: 99%

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

Cabarrocas

2004

phys. stat. sol. (c)

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We review current models and propose new approaches for the production of silicon thin films by low temperature plasma processes. Growth models have often been borrowed from those developed for hydrogenated amorphous silicon and are based on surface diffusion of SiH 3 . However, in situ growth studies have also pointed out the fast diffusion of hydrogen and its role in the crystallization of the film through subsurface reactions. Moreover, ions and silicon nanocrystals can also play a crucial role in microcrystalline silicon deposition. We show that ion bombardment is responsible for the formation of a disorderd subsurface layer while deposition on a cooled substrate allows us to trap the silicon nanocrystals and to prevent their growth, thus leading to nanocrystalline thin films. The deposition at 200 °C on substrates with a low density of surface defects allows for the surface mobility of the nanocrystals and their agglomeration to form large grains, thus resulting in polycrystalline silicon thin films.

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“…It is composed of a combination of silicon crystals and grain boundaries formed during crystallization process. Poly-Si is formed by deposition of the layer and finds a lot of applications such as thin film transistors (TFT) [1], solar cells [2] or strain gauges [3]. It has also proved its efficiency as sensitive material for chemical sensors.…”

Section: Introductionmentioning

confidence: 99%

Aryl-Diazonium Functionalized Polycrystalline Silicon Nanoribbons Based Device for Lead Detection

Borgne

Salaün

Pichon

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Development of sensors enabling lead traces detection is a burning issue as heavy metals ions are responsible of brain diseases. In this paper, we present a simple electronic resistor based on polycrystalline silicon nanoribbons and functionalized with aryl-diazonium salts in view of using this type of structures for heavy metal detection. The preconcentration of lead at the surface of the functionalized nanostructures has been checked. Finally, electrical characterization of the resistors showed that the sensor sensitivity to these species is improved thanks to functionalization in the range 10 −7 to 10 −5 mol·L −1 .

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Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications

Cited by 181 publications

References 138 publications

Stability of microcrystalline silicon for thin film solar cell applications

Stability of microcrystalline silicon for thin film solar cell applications

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

Aryl-Diazonium Functionalized Polycrystalline Silicon Nanoribbons Based Device for Lead Detection

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