Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)

Abstract

Advanced polysilicon SFT's (Super-thin-Film Transistor) were fabricated on quartz at a low temperature process below 610°C. Using the technique of Si+ ion implanted amorphization and subsequent solid phase growth and making a super-thin-film structure, superior electrical characteristics such as high electron mobility of 60 cm2/(V·s) were obtained. The oscillation of a 19 stage ring oscillator with a channel length of 8.4 µm was observed. Propagation delay time of 8.13 ns/stage was attained. The device is expected to be applied to monolithic liquid-crystal-display on low temperature glass and three dimensional LSI technology.

A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source/Drain (SARSD)

“…In order to integrate peripheral driving circuits on the same glass substrate, both a large current drive and a high drain breakdown voltage (BV) are necessary for poly-Si TFT device characteristics. It has been previously reported that the use of a thinner active channel film is beneficial for obtaining a higher current drive [3], [4]. The use of a thin active channel layer, however, inevitably results in poor SD contact and large parasitic series resistance.…”

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

“…Therefore, we proposed a temperature sensor employing a ring oscillator composed of poly-Si TFTs [14]. Although ring oscillators have been utilized to evaluate transistor characteristics [15]- [17], we believe that this was the first report to apply a ring oscillator to a temperature sensor. Incidentally, TFTs with lightly-doped drain structure (LDD TFTs) are indispensable to reduce off-leakage currents and avoid characteristic degradation [18]- [24].…”

Extraction of trap densities in entire bandgap of poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on process conditions of post annealing

“…[1][2][3][4][5][6]. The outstanding advantage is that the reliability under severe bias and temperature stress is higher than those of amorphous-Si TFTs [7] and low-temperature poly-Si (LTPS) TFTs [8].…”