Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers

Zah, Chung−En; Bhat, R.; Favire, F.; Menocal, S.G.; Andreadakis, N.C.; Cheung, Kwok W.; Hwang, D. M.; Koza, M.A.; Lee, T.-P.

doi:10.1109/3.89961

Cited by 73 publications

(4 citation statements)

References 27 publications

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“…The InGaAs/InGaAsP multiple quantum well (MQW) lasers have been widely used for optical data links and longhaul telecommunication systems at 1.55 µm wavelengths [1,2]. Generally, the MQWs grown under compressive strain have many advantages including increased differential gain, high modulation bandwidth, and low threshold current [3,4]. For ternary InGaAs MQWs, however, it is not easy to grow the high-quality InGaAsP barrier because the rapid mismatch of group V materials between wells and the well layer becomes thin, subject to a compressive strain of 1-1.5% [5].…”

Section: Introductionmentioning

confidence: 99%

Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure

Park

2008

Semicond. Sci. Technol.

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We investigated the cavity length and temperature dependence of the device characteristics for 1.5 µm InGaAsP/InGaAsP multiple quantum well lasers with a two-step compositional separate confinement heterostructure by eptiaxial regrowth. The device parameters, such as internal optical loss, internal quantum efficiency, transparency current density and modal differential gain, were estimated by fittings to experimental values of threshold current density and slope efficiency as a function of cavity length. Under continuous wave (CW) mode at 25 • C, the uncoated 600 µm long laser emitted a maximum output power of 22 mW with a threshold current of 9.3 mA and a slope efficiency of 0.17 mW mA −1 , and it operated up to 97 • C. The full-width at half-maximum values of far-field patterns with a single lobe remained almost constant, indicating ∼18.7 • (horizontal) × 24 • (vertical) at 25 • C over a wide range of injection current. In terms of maximum CW operating temperature, the optimum cavity length is governed by the trade off between emitting volume and internal temperature of lasers, leading to a temperature of 116 • C at a cavity length of 900 µm. By applying a high-reflectivity coating, based on an Au/Ti metallic mirror with an insulation layer of SiO 2 , on the rear facet of lasers, the device performance was significantly improved due to the reduced mirror loss without degradation of electrical properties, resulting in a high output power of 36 mW and a low threshold current of 7.8 mA and with a slope efficiency of 0.263 mW mA −1 under CW mode at 25 • C for the 600 µm long cavity.

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Section: Introductionmentioning

confidence: 99%

Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure

Park

2008

Semicond. Sci. Technol.

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“…This advantage is because the conduction band offset in InAlGaAs system, DE C ¼ 0:72DE G is considerably larger than in InGaAsP system (DE C ¼ 0:40DE G ) [1]. This larger conduction band offset has been predicted to result in better electron confinement in the conduction band and, therefore, higher temperature stability [2]. So far the best performances of long wavelength VCSEL were reported on wafer-fused structures, combining the high potential of active cavity material with best distributed Bragg reflectors (DBRs) [3].…”

Section: Introductionmentioning

confidence: 94%

1.5μm VCSEL structure optimization for high-power and high-temperature operation

Mereuta

Syrbu

Яковлев

et al. 2004

Journal of Crystal Growth

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“…This is a promising result if we take into account the six quantum wells of the structure. For comparison, in a four-strained-quantum well SCH laser with conventional quaternary material, and grown at 625 • C by low pressure organometallic chemical vapour deposition (stripe width of 30 µm), a threshold current density of 1.15 kA/cm 2 was measured for 1 mm long cavity, and 1.55 kA/cm 2 for a laser with a cavity of 500 µm [10]. Ginty et aI.…”

Section: Introductionmentioning

confidence: 99%

(lnP)₅/(Ga_0.47In_0.53As)₅ superlattice confined 1.5 µm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy.

Dotor¹,

Huertas²,

Postigo³

et al. 2010

J. Eur. Opt. Soc.-Rapid Publ.

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Room temperature laser emission near 1.55 µm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340 • C by solid source Atomic Layer Molecular Beam Epitaxy , where (lnP) 5 /(Ga 0.47 In 0.53 As) 5 , lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga 0.27 In 0.73 As wells. These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.

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Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers

Cited by 73 publications

References 27 publications

Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure

Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure

1.5μm VCSEL structure optimization for high-power and high-temperature operation

(lnP)₅/(Ga_0.47In_0.53As)₅ superlattice confined 1.5 µm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy.

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Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers

Cited by 73 publications

References 27 publications

Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure

Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure

1.5μm VCSEL structure optimization for high-power and high-temperature operation

(lnP)5/(Ga0.47In0.53As)5 superlattice confined 1.5 µm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy.

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Product

Resources

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(lnP)₅/(Ga_0.47In_0.53As)₅ superlattice confined 1.5 µm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy.