Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Abstract

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS 2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS 2 ; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average I ON /I OFF of 8 × 10 3 (up to 5 × 10 4) and mobility of 5.5 cm 2 V −1 s −1 (up to 26 cm 2 V −1 s −1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

A Review of RFID Sensors, the New Frontier of Internet of Things

“…However, the current development stage of printed RFID tags is still not sufficient to enable real-world applications [ 70 ]. Despite the availability of printed organic transistors with carrier mobilities over 1 cm 2 V −1 s −1 and switching speed in the MHz range [ 71 ], silicon electronics strongly outperform printed electronics in terms of carrier mobilities and switching speeds, as shown in Table 5 . However, printed electronics still provide interesting characteristics related to manufacturing on soft substrates in large areas.…”

1/f Noise Characterization of Bilayer MoS2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics

“…[ 20 ] More recently, the present authors demonstrated low‐voltage and transfer printed MoS 2 FETs on paper in a channel array configuration, with inkjet‐printed hexagonal boron nitride (hBN) gate dielectric and Ag contacts. [ 21 ] These flexible devices exhibited good performance with average carrier mobility of 5.5 cm 2 V −1 s −1 (maximum of 25 cm 2 V −1 s −1 ) and on‐off current ratio of ≈ 10 4 over a statistics of 26 devices, and have been successfully used in digital and analog applications, such as high‐gain inverters, AND gates, and current mirrors. [ 21 ]…”

Integrating superconducting van der Waals materials on paper substrates

“…The combination between low cost (~ 0.1 €/m2), biodegradability and flexibility makes paper-based electronics very promising for applications like disposable wearable electronics and sensors. [1][2][3][4][5][6][7][8][9][10] However, the integration of novel electronic materials, like the van der Waals (vdW) materials family, on paper substrates is hampered by their fibrous structure that introduces a large surface roughness and liquidabsorption. For these reasons, standard device fabrication approaches, developed and optimized for the fabrication of devices on silicon substrates, cannot be directly used on paper substrates.…”