&lt;i&gt;In Situ&lt;/i&gt; Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction

Wellmann, Peter J.; Konias, Katja; Hens, Philip; Hock, Rainer; Magerl, A.

doi:10.4028/www.scientific.net/msf.615-617.23

Cited by 6 publications

(6 citation statements)

References 7 publications

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“…This application indicates that the in-situ visualization of the PVT growth process is available. Employing the in-situ X-ray diffraction to analyze the visualization of polymorphic transformation [119] and the curvature of the lattice plane [113] have been demonstrated during the crystal growth. Furthermore, a wafering process includes grinding the crystal to a specific size and fabricating a flat plane in the direction of the substrate.…”

Section: Sic Substratementioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Section: Sic Substratementioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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“…For this study, a standard growth reactor was used with the specific design feature of three additional mechanical alignment degrees of freedom of the growth chamber to enable advanced X-ray experiments. This PVT system had already been used for X-ray diffraction experiments in the past before the CT system was adapted to the setup [4,5]. A suitable X-ray source and a digital flat panel X-ray detector were attached to the frame of the PVT setup in order to record the required image sequences.…”

Section: Methodsmentioning

confidence: 99%

“…The application of X-ray technology at our department for in-situ visualization of the SiC crystal in the PVT reactor has lead in recent years to several important results on mass transport, polytype switching and defect generation. There are several publications about gaining 2-D X-ray radiography and X-ray diffraction images from the crystal during growth [1][2][3][4][5], which improved the basic understanding of silicon carbide crystal growth. Based on past research, our goal is to significantly improve the image quality by using 3-D X-ray computed tomography.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography

Neubauer

Salamon

Uhlmann

et al. 2014

MSF

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In this paper, we present our new setup and technique for obtaining a real-time 3-D volume shape of the SiC crystal using X-ray computed tomography (CT). Hence, it is possible to determine in-situ the shape of the growth interface with high precision at growth temperatures above 2000 °C in a conventional 3" physical vapor transport (PVT) growth system. We show that the size and shape of a facet can be monitored at different stages during growth and furthermore the crystals face boundary can be determined with high precision throughout the whole growth process.

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“…been shown that in situ visualization of the PVT growth process is possible by the application of x-ray imaging in 2D [92][93][94] (figure 5) and in 3D [81] (figure 6). Even the visualization of polytype-switching [95] and lattice plane bending during growth [96] by using in situ x-ray diffraction has been demonstrated.…”

Section: Process Control and In Situ Monitoringmentioning

confidence: 99%

Review of SiC crystal growth technology

Wellmann

2018

Semicond. Sci. Technol.

101

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The review article describes the interplay of fundamental research and advanced processes that have made SiC a unique semiconductor material for power electronic devices. Related to the outstanding physical properties of SiC, the preparation of this material is quite challenging. Processing is carried out at elevated temperatures that require special emphasis on the design of the growth machine and the applied construction materials. Growth inside a closed growth chamber demands the usage of advanced sensors and sophisticated computer simulation of the growth process. The application of advanced 2D and 3D in situ x-ray visualization techniques enables the visualization of the growth process. Reduction of the density of structural defects, a prerequisite for the technical application in power electronic devices, based on fundamental research and understanding of the crystallographic as well as the electronic properties of SiC beyond the knowledge base of standard semiconductor materials.

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<i>In Situ</i> Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction

Cited by 6 publications

References 7 publications

Review of Silicon Carbide Processing for Power MOSFET

Review of Silicon Carbide Processing for Power MOSFET

Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography

Review of SiC crystal growth technology

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