Magnetic and electrical properties of MBE-grown (Ge1−xSix)1−yMny thin films

The electromagnetic properties of the Mn doped Ge/Si quantum dots diodes

“…They can be used to fabricate advanced spin and magnetic electronic devices [4,5]. Great progress has been made, both theoretically and experimentally, in understanding the structural, electronic, and magnetic properties of Ge doped with Mn [6][7][8]. For example, Park's [9] and Cho's [10] groups reported the preparation of single crystal Ge 1−x Mn x DMs with ferromagnetic (FM) behavior in the range 25-285 K. Jaideep et al synthesized Ge 1−x Mn x nanowires that displayed ferromagnetic properties above 300 K [7].…”

Fabrication of Ferromagnetic Ge Quantum Dots Material

“…Ge DMs will have wide potential applications in the future because of the compatible with the high technology of Si semiconductor integrated circuit, the diluted magnetic semiconductor. Now, the structural, electronic, and magnetic properties for Ge doped with Mn have been obtained large progress theoretically and experimentally [8][9][10]. For example, D.Holmes research group synthesized Ge 1-x Mn x Nanowires displaying the ferromagnetism above 300 K and the hole mobility of around 340 cm /Vs [9].…”

Ferromagnetism in self-assembled Ge quantum dots material followed by Mn-implantation and annealing

“…In particular, group-IV-based DMS materials [9][10][11][12][13] with a magnetically ordered phase with a Curie temperature up to 116 K because of a long-range ferromagnetic interaction [9]. The structural, electronic, and magnetic properties for Si x Ge 1Àx alloys doped with Mn have been investigated theoretically and experimentally [14][15][16][17].…”