Magnetic and structural properties of Mn-implanted GaN

Theodoropoulou, Nikoleta; Hebard, A. F.; Overberg, M. E.; Abernathy, C. R.; Pearton, S. J.; Chu, S. N. G.; Wilson, R. G.

doi:10.1063/1.1376659

Cited by 280 publications

(180 citation statements)

References 26 publications

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“…Since the Curie temperature is predicted to be a strong function of bandgap, magnetic ion concentration and carrier concentration in the semiconductor, it has been proposed that materials with gaps much larger than GaAs and InAs should be investigated [9]. There has been some success in initial experiments on (Ga,Mn)N, prepared either by bulk growth processes [10,11] or direct implantation of Mn into GaN [12,13]. The bulk crystals exhibit paramagnetic behavior, while the implanted GaN shows ferromagnetic contributions to the magnetism below Â/250 K.…”

Section: Introductionmentioning

confidence: 99%

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Overberg

Theodoropoulou

Chu³

et al. 2002

Materials Science and Engineering: B

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Structural and magnetic characteristics of Ni-implanted GaP were measured for doses in the range 3 Á/5 )/10 16 cm (2 . After subsequent annealing at 700 8C, transmission electron microscopy (TEM) showed residual lattice damage which was more significant in highly carbon-doped epi layers as compared to bulk GaP substrates. The magnetization measurements showed two different contributions, one present at 5/75 K and the other below Â/225 K. No secondary phase formation was detected in either type of GaP. #

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Section: Introductionmentioning

confidence: 99%

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Overberg

Theodoropoulou

Chu³

et al. 2002

Materials Science and Engineering: B

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“…It was reported that the ferromagnetic behavior of Mn-implanted GaN could be due to the formation of a Mn 3 Ga phase. 4 Thus, it is suggested that the Ga-Mn bond may originate from a binary phase of Ga-Mn. No observation of Ga-Mn phases could be attributed to the nanoscale size and the random orientation.…”

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“…5 The ferromagnetic property was also reported in Mn-implanted GaN with subsequent annealing. 4 However, some phases could be formed in the films due to the low solubility of magnetic ions in GaN, such as ferromagnetic Ga-Mn and ferrimagnetic Mn-N compounds. These precipitates could give a major contribution to the total magnetic moment of the samples.…”

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“…7 On the other hand, there were also reports that ferromagnetic properties were attributed to the formation of Ga-Mn compounds. 4,8 The origin of ferromagnetic properties in GaN-based DMSs is still unclear.…”

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“…[1][2][3][4][5] In particular, it was theoretically suggested that ͑Ga,Mn͒N films with a high Mn concentration ͑ϳ5 at. %͒ and a high hole concentration (ϳ10 20 cm Ϫ3 ) could yield a high T c ͑у300 K͒.…”

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Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

Baik

Shon

Kang

et al. 2004

Applied Physics Letters

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N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700–900 °C. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga–Mn magnetic phases. Mn–N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga–Mn magnetic phases.

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Magnetic Properties of Mn and Fe-Implanted p-GaN

Theodoropoulou

Overberg

Chu³

et al. 2001

phys. stat. sol. (b)

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The structural and magnetic properties of p-GaN implanted with high doses of Mn + or Fe + (0.1-5 at%) and subsequently annealed at 700-1000 C were examined by transmission electron microscopy, selected-area diffraction patterns, X-ray diffraction and SQUID magnetometry. The implanted samples showed paramagnetic behavior on a large diamagnetic background signal for implantation doses below 3 at% Mn or Fe. At higher doses the samples showed signatures of ferromagnetism with Curie temperatures < 250 K for Mn and < 150 K for Fe implantation. The structural analysis of the Mn-implanted GaN showed regions consistent with the formation of Ga x Mn 1--x N platelets occupying $5% of the implanted volume. An estimate of $(5.5 AE 1.9) m B per Mn was obtained, consistent with the expected value (5.0) for a half-filled shell. The formation of secondary phases such as Mn x Ga y or Mn x N y was excluded by careful diffraction analysis. The implantation process may have application in forming selected-area contact regions for spinpolarized carrier injection in device structures and in enabling a quick determination of the Curie temperatures in dilute magnetic semiconductor host materials.

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Magnetic and structural properties of Mn-implanted GaN

Cited by 280 publications

References 26 publications

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

Magnetic Properties of Mn and Fe-Implanted p-GaN

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