Magnetic and Transport Properties of Half-Metallic Ferromagnetic Compounds as the La0.7Sr0.3MnO3 Epitaxial Manganite Oxide Thin Films

Proximity effects across oxide-interfaces of superconductor-insulator-ferromagnet hybrid heterostructure

“…Following the same sum rules mentioned in the methods section, the spin magnetic moment s z value of Mn at 10 K is calculated to be +1.68 ± 0.05  μ B per Mn atom ( l z = 0.38 ± 0.05  μ B per Mn atom) for S2. This magnetic moment value is smaller than that in bulk (3.33  μ B per Mn atom) 27 . One possible explanation can be that the magnetic moments in the bottom part of the Mn layer is smaller than that in the upper part due to a possible dead layer formation.…”

“…A reduced magnetic moment value at the interface seems to be more plausible here. Nonetheless, all models yield a reduced average magnetic moment value of around +2.25 ± 0.05  μ B per Mn atom which is significantly lower than in bulk or thin film of LSMO on (001) STO (3.33  μ B per Mn atom) 27 . Thus the PNR profile analysis supports our XMCD results at 10 K. The PNR profiles measured at 100 K (see Supplementary Information: Fig.…”

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

“…The magnetization direction dependent-resistance for this tunneling junction can be explained by tunneling magnetoresistance (TMR) which is about spin-polarized tunneling that involves alignment of magnetic moments of the two magnetic electrode layers 22 29 . According to Kouacou’s research in 2008 30 , LSMO/STO(001) has an easy magnetization direction with [110] as the easy-axis while along the perpendicular axis, the saturation field is much higher (the saturation field μ 0 H sat is found to be 7,000G at 285 K and 14,000G at 10 K), so there is no noticeable change in resistance because of the relatively much weaker magnetic field applied. Therefore, the loop is analogous to that measured without applying a magnetic field.…”