Magnetic field controllable nonvolatile resistive switching effect in silicon device

Abstract

A Si–SiO2–MgO device showing nonvolatile resistive switching effect is fabricated. It is observed the resistance of the device changed from high value to low value at a certain transition voltage after being stimulated by a large current. In addition, the transition voltage shifts reproducibly under a reversed large current. By applying a reading voltage in the range of the transition voltages, nonvolatile resistive switching phenomena with on/off ratio of about 10, endurance of more than 200 cycles and retention of more than 104 s is obtained. More importantly, it is also observed that the magnetic field could shift the transition voltage to higher values, affecting or even suppressing the resistive switching. The magnetic field controllable nonvolatile resistive switching effect in the silicon device suggested by this work may be helpful to the silicon based industry.

Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics

“…3,5 Moreoever, most of these resistive switching devices are only operated by a single electrical stimulus, limiting their multifunctionality and storage capacity. 6,7 Another promising strategy to construct four states memory is multiferroic tunneling junctions, which are composed of ferromagnetic electrodes separated by a ferroelectric tunnel barrier. 8,9 However, these multilevel resistance states switched by electric and magnetic fields mostly operate at low temperature, restricting the practical device applications.…”

Remote control of resistive switching in TiO2 based resistive random access memory device

“…Earlier, the shift of voltage with the applied magnetic field has been demonstrated in GaAs devices 24 and correlated such an intriguing phenomena to a residual Lorentz force, shift of Landau level of electrons in conduction band, electron mobility and thermal & impact ionization of electrons 25 , 26 . Yet in another work, the effect of magnetic field on switching behavior of silicon device also showed the suppression of LRS state confirming that magnetic fields can influence the LRS state 19 . Earlier conductive bridge resistive random access memory (CBRRAM) cell using Ag doped polymer electrolyte between Pt electrodes has well been demonstrated 27 .…”

“…Yet in another study, a delay in transition from HRS to LRS in presence of magnetic field has been well reported by Wang et al . 19 in Si–SiO 2 –MgO device. The resistive switching behavior has been most widely observed in a variety of binary transition metal oxides 20 – 22 such as NiO, ZnO, TiO 2 , Nb 2 O 5 and ZrO 2 .…”

Conductance Quantization in Resistive Random Access Memory

“…Another important aspect related to the conductance quantization effect in RRAM devices is that the quantized CF can be made use of to investigate any other novel physical effects, such as magnetic and thermoelectric properties. Some works on the magnetic modulation in RRAM have been reported [ 30 – 42 , 44 – 46 ], most of which just studied the RRAM devices with usual oxygen vacancies of CF or metal CF. Our group has also investigated the intrinsic electron transport mechanism in the formed CF by measuring the thermoelectric Seebeck effect [ 223 ].…”