The switching field distributions in GMR devices with GdFe free layers of Si/Ru (3 nm)/Cu (75 nm)/Ru (3 nm)/Cu (70 nm)/Ru (13 nm)/TbFeCo (10 nm)/CoFe (1 nm)/Ag (6 nm)/ GdFe (16.5 nm)/Ru (3 nm) were studied by using high-resolution magneto-optical (MO) microscopy. The MO images of patterns with shapes of circles, triangles, squares and hexagonals, and in various sizes with lengths along one side of 200 nm 50 µm and periods of 1 100 µm are studied. The high-resolution MO microscope had a CaF2 zoom lens that allowed us to obtain a spatial resolution as high as 200 nm. The switching field distributions were measured for the patterns with lengths along one side of 5 50 µm by analyzing the MO images.