Magnetoresistance and Inelastic Scattering Time in Thin Films of Silver and Gold in Weakly Localized Regime

Kawaguti, T.; Fujimori, Yasunobu

doi:10.1143/jpsj.52.722

Cited by 38 publications

(10 citation statements)

References 20 publications

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“…4(e) and 4(f) for δ = 0.5 and 3 uc respectively at 2 K. Here, the data can be divided in two regions, a positively sloped MR at lower field and a negatively sloped MR at the higher field, resulting in a local MR maximum seen at 3.6 and 3.2 T for δ = 0.5 and 3 uc respectively. In our samples this maxima is observed at a much higher field than in 2D metal films of Bi and Au where the crossover field is ∼ 0.1 and 2.5 T respectively 11,31,32 . This in-plane positive MR diminishes above ∼5 K.…”

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confidence: 50%

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

et al. 2014

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confidence: 50%

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

et al. 2014

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“…4(b), in Pt|GGG, MR, i.e. WAL, clearly depends on the H direction; |∆R/R| in H||z is larger than that in in-plane H cases (H||x and H||y), which is the behavior expected from WAL in nearly two-dimensional electron systems [19,27,28]. In contrast, in Pt|YIG, except for SMR contribution affected by magnetization direction in YIG in a low-H region [5], the high-H behavior is almost isotropic with respect to H, as shown in symbols in Fig.…”

mentioning

confidence: 82%

Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12

Shiomi

Ohtani

Iguchi

et al. 2014

Applied Physics Letters

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We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K) and magnetic-field (−15-15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y3Fe5O12. Hall resistance in the Pt film is also affected by Y3Fe5O12, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y3Fe5O12.In the field of spintronics, a pure spin current, which is a flow of spin angular momentum without a net charge current, has attracted a great deal of attention in view of spin-current science and also of practical application [1]. For study on spin-current phenomena, Pt|Y 3 Fe 5 O 12 (Pt|YIG) bilayers have been used frequently as a typical system. YIG is a ferrimagnetic insulator with a large charge gap (∼ 2.7 eV) and a high magnetic-transition temperature (∼ 553 K), which enables spin-current injection free from spin-polarized currents at room temperature. Injected pure spin currents are able to be detected electrically in Pt by means of the inverse spin Hall effect (ISHE) which is the conversion of an injected spin current into a transverse electric current due to the spin-orbit interaction. Since Pt has strong spin-orbit interaction, efficiency of the ISHE is as high as 1-10 percent; hence, Pt has often been used as a spin-current detector. Using Pt|YIG systems, many experiments on spin-current injection and detection have been performed, e.g. spin pumping [2] and the spin Seebeck effect [3].Recently, an unconventional magnetoresistance (MR) effect was reported for Pt|YIG structures. Although Pt is a paramagnetic metal, MR in about 10-nm-thick Pt films on YIG reflect the magnetization direction of YIG and anisotropic MR was observed in a low magnetic-field region (≤ 0.2 T) [4,5]. This anisotropic MR was found to be caused mainly by a spin mixing effect at the interface between Pt and YIG [5]; concerted actions of the direct and inverse spin Hall effects generate an additional electric current and thus lead to resistance change affected by the magnetization direction in YIG. This magnetoresistance was named the spin-Hall magnetoresistance (SMR) [5] and this mechanism has been supported by following reports [6][7][8][9][10][11][12][13]. * Y. Shiomi and T. Ohtani contributed equally to this work.In the present paper, we discuss interface-dependent magnetotransport properties in Pt|YIG at low temperatures using very thin (∼ 2 nm) Pt films where the interface effect should be further pronounced owing to the reduced Pt volume. By conducting magnetotransport measurements in a wide temperature (0.46-300 K) and magnetic field (−15-15 T) region, we have shown that MR and Hall effects at high magnetic-fields in Pt|YIG exhibit totally different behavior from those in c...

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“…[12][13][14][15] Again different procedures for the production of the film as crystallinity, roughness, grain boundaries, voids and any other defects may be important besides resistivity for details of the scattering mechanisms. So far only our results refer to epitaxial and well-annealed films.…”

Section: B Temperature Dependence Of Imentioning

confidence: 99%

Magnetoconductivity of ultrathin epitaxial Ag films on Si(111)7×7at low temperatures

1999

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Ultrathin epitaxial Ag films on Si͑111͒ 7ϫ7 have been shown to have at approximately 4 K a very low conductance, whereas at 100 K the metallic conductivity is evident. Therefore the magnetoconductance has been used to identify the different scattering mechanisms. The conductance and the magnetoconductance have been measured in situ with four-point probes in van der Pauw arrangement. For thicknesses from 1.8 to 20 ML different scattering mechanisms have been revealed in the temperature range from approximately 4 to 20 K and magnetic fields from Ϫ4 T to ϩ4 T perpendicular to the sample surface. Whereas for films thicker than 3 ML the weak localization and antilocalization provide a complete description, the thinnest films show properties not yet described quantitatively by any theory.

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Magnetoresistance and Inelastic Scattering Time in Thin Films of Silver and Gold in Weakly Localized Regime

Cited by 38 publications

References 20 publications

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

Kondo scattering inδ-dopedLaTiO3/SrTiO3interfaces: Renormalization by spin-orbit interactions

Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12

Magnetoconductivity of ultrathin epitaxial Ag films on Si(111)7×7at low temperatures

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