Magnetron sputtering process control by medium-frequency power supply parameter

Posadowski, Witold; Wiatrowski, A.; Dora, Jerzy; Radzimski, Z. J.

doi:10.1016/j.tsf.2007.05.077

Cited by 65 publications

(33 citation statements)

References 5 publications

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“…[11][12][13] By now it is well established that a large fraction of the sputtered atoms becomes ionized and participates in the sputtering process (self-sputtering 6,[14][15][16][17] ) by raising the peak power density by typically 2 orders of magnitude above the average value. 18,19 It has been demonstrated that the role of self-sputtering evolves as the pulse develops, however, the details of this evolution strongly depend on the target material.…”

Section: Introductionmentioning

confidence: 99%

Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer

Окс

Anders

2009

Journal of Applied Physics

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The plasma of a high power impulse magnetron sputtering (HiPIMS) system has been investigated using a time-of-flight (TOF) spectrometer. The target materials included high sputter yield materials (Cu, Ag), transition metals (Nb, Cr, Ti), and carbon (graphite); the sputtering gases were argon, krypton and nitrogen, and two different target thicknesses were selected to consider the role of the magnetic field strength. Measurements for selected combinations of those parameters give quantitative information on the transition from gasdominated to metal-dominated (self-sputtering) plasma, on the fractions of ion charge states, and in the case of molecular gases, on the fraction of atomic and molecular ions.

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Section: Introductionmentioning

confidence: 99%

Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer

Окс

Anders

2009

Journal of Applied Physics

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“…The anode was connected to the positive potential of the DSP power supply [6], while the whole construction of magnetron was grounded with the vacuum chamber. Figure 1 shows a schematic arrangement of anode and cathode (the cathode was on the ground potential).…”

Section: Experimental Studiesmentioning

confidence: 99%

The role of magnetic energy on plasma localization during the glow discharge under reduced pressure

et al. 2016

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Abstract. In this work, we present the fi rst results of our research on the synergy of fi elds, electric and magnetic, in the initiation and development of glow discharge under reduced pressure. In the two-electrode system under reduced pressure, the breakdown voltage characterizes a minimum energy input of the electric fi eld to initiate and sustain the glow discharge. The glow discharge enhanced by the magnetic fi eld applied just above the surface of the cathode infl uences the breakdown voltage decreasing its value. The idea of the experiment was to verify whether the contribution of potential energy of the magnetic fi eld applied around the cathode is suffi ciently effective to locate the plasma of glow discharge to the grounded cathode, which, in fact, is the part of a vacuum chamber wall (the anode is positively biased in this case). In our studies, we used the grounded magnetron unit with positively biased anode in order to achieve favorable conditions for the deposition of thin fi lms on fi brous substrates such as fabrics for metallization, assuming that locally applied magnetic fi eld can effectively locate plasma. The results of our studies (Paschen curve with the participation of the magnetic fi eld) seem to confi rm the validity of the research assumption. What is the most spectacular -the glow discharge was initiated between introduced into the chamber anode and the grounded cathode of magnetron 'assisted' by the magnetic fi eld (discharge did not include the area of the anode, which is a part of the magnetron construction).

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“…Reactive magnetron sputtering processes are distinguished by a high level of complexity. Posadowski points out three modes of magnetron operation during the reactive aluminum oxide synthesis with different power supply characteristics reflected in the basic phenomena associated with the synthesis using magnetron plasma [22,23]. The scientific goal of our studies was to diagnose the system used, thus, determine the suitability of both techniques.…”

Section: Introductionmentioning

confidence: 99%

“…1 shows the diagram of the apparatus used in the experiments. The process of reactive magnetron sputtering took place inside the grounded vacuum chamber equipped with two WMK100 magnetrons working in closed field mode opposing each other at a distance of 35 cm [22]. The magnetron system was electrically coupled and worked in AC mode.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

Choduń

Nowakowska-Langier

Zdunek

2015

Materials Science-Poland

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Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

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Magnetron sputtering process control by medium-frequency power supply parameter

Cited by 65 publications

References 5 publications

Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer

Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer

The role of magnetic energy on plasma localization during the glow discharge under reduced pressure

Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

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