Mask Materials and Designs for Extreme Ultra Violet Lithography

Kim, Jung-Sik; Ahn, Jinho

doi:10.1007/s13391-018-0058-6

Cited by 20 publications

(9 citation statements)

References 78 publications

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“…The precise measurement of optical properties in the EUV-regime around 91.85 eV / 13.5 nm is still a challenge for the development of optical components such as photomasks or mirrors for EUV lithography [5,6,7]. Due to the short wavelength in this spectral regime, contamination, oxidation, or surface roughness in the nanometer range will affect the optical response of a sample much stronger than for instance at optical wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Determination of optical constants of thin films in the EUV

Ciesielski

Saadeh

Philipsen³

et al. 2022

Appl. Opt.

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The determination of fundamental optical parameters is essential for the development of new optical elements such as mirrors, gratings, or photomasks. Especially in the extreme ultraviolet (EUV) and soft x-ray spectral range, the existing databases for the refractive indices of many materials and compositions are insufficient or are a mixture of experimentally measured and calculated values from atomic scattering factors. Since the physical properties of bulk materials and thin films with thicknesses in the nanometer range are not identical, measurements need to be performed on thin layers. In this study we demonstrate how optical constants of various thin film samples on a bulk substrate can be determined from reflection measurements in the EUV photon energy range from 62 eV to 124 eV. Thin films with thickness of 20 nm to 50 nm of pure Mo, Ni, Pt, Ru, Ta, and Te and different compositions of N i x A l x , PtTe, P t x M o , R u x T a x , R u 3 R e , R u 2 W , and TaTeN were prepared by DC magnetron sputtering and measured using EUV reflectometry. The determination optical constants of the different materials are discussed and compared to existing tabulated values.

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Section: Introductionmentioning

confidence: 99%

Determination of optical constants of thin films in the EUV

Ciesielski

Saadeh

Philipsen³

et al. 2022

Appl. Opt.

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“…Step coverage and filling of the CVD TiN, IMP TiN, and CVD W thin films were analyzed using SEM and TEM. Due to the reduction of the contact hole size, it was difficult to obtain the correct cutting surface in general specimen preparation, so the cross section was checked again using the Precision Etching Coating System (PECS) [17]. Existing published paper [18] support this paper.…”

Section: Methodsmentioning

confidence: 91%

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

et al. 2020

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Here, we developed the optimal conditions in terms of physical and electrical characteristics of the barrier and tungsten (W) deposition process of a contact module, which is the segment connecting the device and the multi-layer metallization (MLM) metal line in the development of 100 nm-class logic devices. To confirm its applicability to the logic contact of barrier and W films, a contact hole was formed, first to check the bottom coverage and the filling status of each film, then to check the electrical resistance and leakage characteristics to analyze the optimal conditions. At an aspect ratio of 3.89:1, ionized metal plasma (IMP) Ti had a bottom coverage of 40.9% and chemical vapor deposition (CVD) titanium nitride (TiN) of 76.2%, confirming that it was possible to apply the process to 100 nm logic contacts. W filling was confirmed, and a salicide etching rate (using Radio Frequency (RF) etch) of 13–18 Å/s at a 3.53:1 aspect ratio was applied. The etching rate on the thermal oxide plate was 9 Å/s. As the RF etch amount increased from 50–100 Å, the P active resistance increased by 0.5–1 Ω. The resistance also increased as the amount of IMP Ti deposition increased to 300 Å. A measurement of the borderless contact junction leakage current indicated that the current in the P + N well increased by more than an order of magnitude when IMP Ti 250 Å or more was deposited. The contact resistance value was 0.5 Ω. An AC bias improved the IMP Ti deposition rate by 10% in bottom coverage, but there was no significant difference in contact resistance. In the case of applying IMP TiN, the overall contact resistance decreased to 2 Ω compared to CVD TiN, but the distribution characteristics were poor. The best results were obtained under the conditions of RF etch 50 Å, IMP Ti 200 Å, and CVD TiN 2 × 50 Å.

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“…Significant effort has been expended over many decades to develop and implement x‐ray lithography (XRL) or extreme ultraviolet (EUV) lithography as an extension of light‐based lithography into the x‐ray or soft x‐ray regions of the electromagnetic spectrum. The first EUV lithography systems are now entering mainstream IC production with half‐pitch resolution approaching 10 nm, but the high cost of ownership of these tools means that they will only be used for very high volume or high value manufacturing, so the need for lower‐cost nanomanufacturing tools remains.…”

Section: Conventional Alternative Lithography Techniquesmentioning

confidence: 99%

Plasmonic Lithography: Recent Progress

Hong

Blaikie

2019

Advanced Optical Materials

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Plasmonic lithography has received extensive attention as both a potential candidate for next generation lithography and as an interesting testbed to test the fundamental resolution limits of optical imaging and patterning. Owing to the utilization of the otherwise lost evanescent near fields containing high frequency information, surface plasmon-based lithographic techniques can break the diffraction limit in conventional photolithography; resolution down to approximately 20 nm using visible light has been experimentally demonstrated, and theoretical studies have analyzed methods that have the potential for creating nanopatterns with sub-10 nm resolution. This paper reviews the research progress and various modalities of plasmonic lithography, addresses current obstacles and problems, and provides an outlook for practical application.

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Mask Materials and Designs for Extreme Ultra Violet Lithography

Cited by 20 publications

References 78 publications

Determination of optical constants of thin films in the EUV

Determination of optical constants of thin films in the EUV

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

Plasmonic Lithography: Recent Progress

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