MBE growth and properties of GaN on GaN/SiC substrates

Johnson, Mark A.; Fujita, Shizυo; Rowland, W. H.; Bowers, Karen; Hughes, W. C.; He, Yanbo; Masry, N.A.E.; Cook, J. W.; Schetzina, J. F.; Ren, Jingjian; Edmond, J. A.

doi:10.1016/s0038-1101(96)00169-4

Cited by 16 publications

(7 citation statements)

References 4 publications

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“…Originally, material from vendor A showed poor, extremely spotty RHEED as received ͑solvent cleaned͒ as indicated in Fig. This seemed to confirm the suspicions of Johnson et al 11,12 who suggested that the LGO surface begins to degrade at high temperature. When the material was exposed to a 1050°anneal, the spots slowly merged into relatively smooth streaks ͓see Fig.…”

Section: Resultssupporting

confidence: 55%

“…Films grown on the correct face show smooth morphology and excellent x-ray rocking curves. It is worth noting that Johnson et al 11,12 had 002 FWHM of 103 arcsec for a 1.5 m thick GaN on LGO. This morphology is considerably smoother than comparable thickness films grown on sapphire.…”

Section: B Results Of Growths Of Gan On Lgomentioning

confidence: 94%

“…This has lead to an extremely high defect density due to the growth mechanism being three dimensional. Since then, several researchers have grown on LGO using MBE [10][11][12][13][14] and with metalorganic chemical vapor deposition ͑MOCVD͒. One such substrate, lithium gallate ͑LGO͒, LiGaO 2 , has been studied for piezoelectric applications since 1965.…”

Section: Introductionmentioning

confidence: 99%

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Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate

Doolittle

Kropewnicki

Carter-Coman

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy Since we have found that an entire substrate can be chemically removed in less than 5 min and since GaN is impervious to chemical etching, the GaN on lithium gallate ͑LGO͒ system is an excellent template ͑due to near infinite etch selectivity͒ for developing a thin film/compliant GaN substrate. Here we report on our efforts to grow GaN on LGO, including improvement of the atomic surface morphology using pregrowth pretreatments. We also report the first transferred thin film GaN substrate grown on LGO, transferred off of LGO and mounted on GaAs. With this approach, ͑InAl͒GaN alloys can be grown on thin GaN films, implementing a ''compliant'' substrate for the nitride alloy system. In addition, the flexibility of bonding to low cost Si, metal or standard ceramic IC packages is an attractive alternative to SiC and hydride vapor phase epitaxy GaN substrates for optimizing cost verses thermal conductivity concerns. We have demonstrated high quality growth of GaN on LGO. X-ray rocking curves of 145 arcsec are shown on a 0.28 m thick films. For the first time, we present data on the out-of-plane crystalline quality of GaN/LGO material. Likewise, we show two orders of magnitude improvement in residual doping concentration and factors of 4 improvement in electron mobility. We show substantial vendor to vendor and intravendor LGO material quality variations. We have quantified the desorption of Ga and Li from the surface of LGO at typical growth temperatures using in situ desorption mass spectroscopy and x-ray photoelectron spectroscopy.

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Section: Resultssupporting

confidence: 55%

Section: B Results Of Growths Of Gan On Lgomentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

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Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate

Doolittle

Kropewnicki

Carter-Coman

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Lithium gallate (LiGaO 2 ) is gaining increasing attention as a potential substrate for GaN growth [1][2][3][4][5]. LiGaO 2 has an orthorhombic crystal structure (a = 5.402 Å, b = 6.372 Å, c = 5.007 Å) [6] that can be described as wurtzite-like (reoriented a-axis lattice constant 3.180 Å) with a departure from hexagonal symmetry due to the distortions introduced by the different sized metallic atoms.…”

Section: Introductionmentioning

confidence: 99%

High resolution x-ray diffraction analyses of GaN/LiGaO₂

Matyi

Doolittle

Brown

1999

J. Phys. D: Appl. Phys.

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Lithium gallate (LiGaO2) is gaining increasing attention as a potential substrate for the growth of the important semiconductor GaN. In order to better understand this material we have performed high-resolution double- and triple-axis x-ray diffraction analyses of both the starting LiGaO2 and GaN/LiGaO2 following epitaxial growth. A high-resolution triple-axis reciprocal space map of the substrate showed a sharp, well-defined crystal truncation rod and a symmetric streak of intensity perpendicular to q002, suggesting high structural quality with mosaic spread. Triple-axis scans following GaN growth showed (1) the development of isotropic diffuse scatter around the LiGaO2 (002) reflection, (2) the presence of a semi-continuous intensity streak between the LiGaO2 (002) and GaN (0002) reflections, and (3) a compact pattern of diffuse scatter around the GaN (0002) reflection that becomes increasingly anisotropic as the growth temperature is increased. These results suggest that LiGaO2 permits the epitaxial growth of GaN with structural quality that may be superior to that observed when growth is performed on SiC or Al2O3.

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“…2,3 Recently, the widely experienced problem of peeling and cracking of GaN grown on LGO 4 was eliminated by identifying the correct growth face for growth of GaN. While recent progress has been made on the reduction of defect densities using lateral overgrowth 1 techniques on highly mismatched substrates, if possible, a lattice matched substrate would be preferred.…”

Section: Introductionmentioning

confidence: 99%