MBE growth of atomically smooth non-polar cubic AlN

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

“…In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition [2], reactive molecular beam epitaxy [3], vacuum arc/cathodic arc deposition [4], DC/RF reactive sputtering [5][6][7], ion beam sputtering [8], metal-organic chemical vapor deposition (MOCVD) [9], and miscellaneous [10] other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications.…”

Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

“…In order to sustain the cubic phase during the epitaxy it is crucial to maintain an excess of group III elements on the growth surface. It is well established that exposing a c-AlN surface to nitrogen flux leads to the formation of hexagonal AlN clusters [12,13]. We have used a new approach to maintain the excess of group III elements for growth of Al x Ga 1 À x N layers of a wide Al composition range, namely the use of an excess Ga flux.…”

“…For GaN we have used the value measured for the bulk free-standing zinc-blende GaN [9] and for AlN we have used the value for the thin c-AlN layers grown on 3C-SiC [12]. The lattice parameter of thin cubic Al x Ga 1 À x N layers changes almost linearly from the value for the cubic GaN to the value for AlN and thus closely follows Vegard's law.…”

“…However, sustaining the zinc-blende growth conditions for bulk ternary AlGaN is even more difficult than for binary GaN. There are only a limited number of publications on the subject and they concentrate on the growth of thin zinc-blende AlN layers [12][13][14][15][16][17][18]. We have demonstrated that our newly developed PA-MBE process for the growth of bulk cubic layers also allows us to achieve free-standing Al x Ga 1 À x N wafers and this is the subject of our current research.…”

Molecular beam epitaxy based growth of cubic GaN quantum dots

“…3 Results and discussion 3.1 Growth The first step is the cleaning of the 3C-SiC substrate by an Al deposition and desorption process, followed by the growth of a 30 nm thick c-AlN barrier layer at 730° C substrate temperature by plasma assisted molecular beam epitaxy (PAMBE) [9]. The RHEED pattern of the AlN surface in Fig.…”