Measurement-based large-signal diode modeling system for circuit and device design

Root, David E.; Pirola, Marco; Fan, Siqi; Anklam, W.J.; Cognata, A.

doi:10.1109/22.260708

Cited by 22 publications

(10 citation statements)

References 8 publications

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“…Root has developed data-based diode model using measured IV-data and derived charge look-up table. [1,2] [3,4] This model is believed to be the only accurate diode model so far. However, to do interpolation of charge look-up table by Spline, the maximum fit to the order of derivatives is the third in chargevoltage function.…”

Section: Introductionmentioning

confidence: 98%

Accurate scalable capacitance/current-voltage based lookup-table diode model

Wei

Zhu

Yin

et al. 2012

Proceedings of 2012 5th Global Symposium on Millimeter-Waves

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A capacitance and Current look-up table based large-signal Phemt-diode model is presented based on an ensemble of bias-dependent small-signal equivalent circuits. The model is capable of accurate simulation of bias-dependent smallsignal S-parameters and current performance over the dataacquisition bias range. Instead of charge model in conventional Root diode model, capacitance as function of voltage is used. Compared to charge model, capacitance gives more accuracy that fits to higher order of derivatives and avoids potential data instability. The model has also accurate leakage model and can be used for a variety of applications where accurate nonlinearity is of primary concern. The validity of the model is demonstrated by comparing the simulation of DC curves, leakages, and smallsignal S-parameters over a wide bias range, by comparison of the measured data. Keyword----Lookup_table Model, deembedding

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Section: Introductionmentioning

confidence: 98%

Accurate scalable capacitance/current-voltage based lookup-table diode model

Wei

Zhu

Yin

et al. 2012

Proceedings of 2012 5th Global Symposium on Millimeter-Waves

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“…1 When modeling a pn-junction, different operating conditions are possible, such as: steady-state small-signal, steady-state large-signal, DC, and transient. [1][2][3][4] The transverse averaging technique (TAT) allows the general three-dimensional (3D) equations of semiconductor electronics to be converted into the so-called quasi-onedimensional (quasi-1D) form. The quasi-1D equations involve all the physical scalar quantities (potential, charge density, etc.)…”

Section: Introductionmentioning

confidence: 99%

Large-signal and high-frequency analysis of nonuniformly doped or shaped pn-junction diodes

Barybin

Santos

2011

Journal of Applied Physics

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An analytical theory of nonuniformly doped or shaped PN-junction diodes submitted to largesignals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-onedimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current-voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity.

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“…The papers of Fan [3] and Root [4] are of the few publications that explicitly describe adaptive measurement procedures for active device characterization. The adaptive algorithm described in Reference [3] only employs the transistor DC characteristics.…”

mentioning

confidence: 99%

“…Each measurement is analysed and more bias points are placed in regions where the I DS ðV DS Þ rate of change is high. The diode modelling procedure in Reference [4] also makes use of S-parameter data in order to accurately model the bias dependence of the intrinsic diode capacitance. In order to do this, the extrinsic model elements of the device equivalent circuit must be known, which implies that a certain number of measurements and associated modelling have to done before the adaptive algorithm can be used.…”

mentioning

confidence: 99%

“…These underlaying device changes are not always accurately reflected in the device's DC behaviour [6]. Unlike the diode characterization procedure in Reference [4], the new method uses the S-parameter data directly. No information regarding the device equivalent circuit is required, greatly increasing the flexibility and technology independence of the proposed algorithm.…”

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confidence: 99%

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A new adaptive multi‐bias S‐parameter measurement algorithm for transistor characterization

Niekerk

Schreurs

2005

Int J Numerical Modelling

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SUMMARYA new adaptive measurement algorithm is described for the control of an automated S-parameter measurement set-up used to characterize transistors for non-linear modelling. The procedure differs from previous algorithms in that is uses both the device DC-and S-parameter data to identify DC bias regions where the device characteristics are changing rapidly. By placing more bias points in these areas and less data points in regions where the device response stays constant, the non-linear behaviour of the device can be characterized more accurately while keeping the total volume of the experimental data and hence the measurement time to an acceptable level. Experimental results are presented that illustrates the operation of the adaptive algorithm as well as the influence that the selection procedure has on non-linear modelling results.

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Measurement-based large-signal diode modeling system for circuit and device design

Cited by 22 publications

References 8 publications

Accurate scalable capacitance/current-voltage based lookup-table diode model

Accurate scalable capacitance/current-voltage based lookup-table diode model

Large-signal and high-frequency analysis of nonuniformly doped or shaped pn-junction diodes

A new adaptive multi‐bias S‐parameter measurement algorithm for transistor characterization

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