Measurement of Chirp Parameter and Modulation Index of a Semiconductor Laser Based on Optical Spectrum Analysis

Zhang, Tao; Zhu, Ning Hua; Zhang, Bang Hong; Zhang, Xin

doi:10.1109/lpt.2006.890724

Cited by 16 publications

(4 citation statements)

References 17 publications

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“…Finally, the modified linewidth method relies on the measurement of SL's linewidth as a function of emitted power under and above the laser's threshold, and the ratio of the slopes of the curves linewidth as a function of the inverse power gives directly the a H -factor value (Villafranca et al, 2005). The ratio of the FM over AM components gives a direct measurement of the a H -factor (Harder et al, 1983;Kruger and Kruger, 1995;Shimpe et al, 1986;Zhang et al, 2007). Those methods based on the SL's linewidth both require a thorough characterization of the specific device under test and suffer from a poor accuracy due to the complex dependence of the laser's linewidth on several parameters.…”

Section: Major Experimental Techniques For Measuring the A H -Factormentioning

confidence: 99%

GaAs-Based Quantum Dot Lasers

Crowley¹,

Naderi²,

Shen³

et al. 2012

Semiconductors and Semimetals

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Section: Major Experimental Techniques For Measuring the A H -Factormentioning

confidence: 99%

GaAs-Based Quantum Dot Lasers

Crowley¹,

Naderi²,

Shen³

et al. 2012

Semiconductors and Semimetals

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“…There are mainly three categories of measurement methods: those relying in the measurement of the phase noise in the optical spectrum [17][18][19], those based on modulating the laser and analyze the frequency chirp [11,12,[20][21][22][23], and those based on optical feedback and the Lang-Kobayashi theory [9,10,24].…”

Section: Measurement Methodsmentioning

confidence: 99%

Investigation on the linewidth enhancement factor of multiple longitudinal mode semiconductor lasers

et al. 2008

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We present a theoretical and experimental research of the linewidth enhancement factor or factor in multiplelongitudinal mode semiconductor lasers. In this work, several methods originally developed for single-mode lasers have been adapted for their use with multiple-longitudinal mode lasers and applied to each mode of several Fabry-Perot lasers at a time. The concepts of material LEF and device LEF are compared and discussed.

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“…In 2005, L. S. Yan et al proposed the graphical solution for half-wave voltage and chip parameters of MZMs using optical spectrum analysis [19]. In 2006, we extended the optical spectrum analysis method to extracting frequency responses of DMLs [20], [21], as shown in Fig. 2(b).…”

Section: E/o Device Measurementmentioning

confidence: 99%

Accurate Calibration and Measurement of Optoelectronic Devices

Zhang

Chen

et al. 2021

J. Lightwave Technol.

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Frequency responses of optoelectronic devices are essential to obtain the precise performance of electrical-to-optical-to-electrical signal conversion or optical signal processing. We reviewed the development of optical or electrical measurement methods proposed for characterizing electrical/optical (E/O) devices, optical/electrical (O/E) devices and optical/optical (O/O) devices in the frequency domain from the perspective of accurate calibration standard. It has been found that full calibrated E/O or O/E measurement requires at least an optoelectronic thru standard for the conversion between optical and electrical domains, and an electrical port extension for de-embedding the error or adapter network of microwave source or detector. The indetermination problem still exists in most O/E and E/O device characterization, which appears in different forms for different measurement techniques. Nevertheless, it should be noticed that obtaining an optoelectronic thru standard can be transferred to characterizing a microwave source or detector in the electrical domain, and a precise electrical calibration standard is much easier to be obtained as compared with an optoelectronic calibration standard. Therefore, the calibration standard transfer from optical to electrical domain is a prominent approach to solve the indetermination problem.

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Measurement of Chirp Parameter and Modulation Index of a Semiconductor Laser Based on Optical Spectrum Analysis

Cited by 16 publications

References 17 publications

GaAs-Based Quantum Dot Lasers

GaAs-Based Quantum Dot Lasers

Investigation on the linewidth enhancement factor of multiple longitudinal mode semiconductor lasers

Accurate Calibration and Measurement of Optoelectronic Devices

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