Measurement of the near-surface crystallinity of silicon on sapphire by UV reflectance

Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications

“…Optical reflectance at short wavelength has been widely used as non-destructive method for detecting surface damage [28], measuring near-surface crystallinity [13,29] in semiconductors. The deviations of reflectance spectra of samples from reference spectrum of bulk material at different wavelength may be contributed by Rayleigh scattering due to surface roughness, degree of the crystallization, and existence of a foreign surface layer [30].…”

Optical Properties of Polycrystalline Silicon Films

“…The best-fit results for the rough surface were also used to show that the density profile is characteristic of hemispherical rather than pyramidal irregularities. This hemispherical profile indicates three-dimensional nucleation growth at 870 0 C and 350 Torr pressure and is markedly different from the columnar growth structure observed by cross-sectional TEM for LPCVD films grown at 620 0 C [8].…”

“…For this reason it is necessary to complement it by other techniques such as scanning electron microscopy [7] and crosssectional transmission electron microscopy [8]. Such measurements not only confirmed the results of the optical technique but also revealed the characteristic lateral roughness dimensions to be of the order of 200 to 2000 A.…”

“…reflection. It had originally been developed to characterize the near-surface crystallinity of heteroepitaxial silicon on sapphire (50S) films [24] but was found to be applicable for rapid quality testing of LPCVD silicon films both in the as-grown and annealed state at the two wavelengths indicated by the reflectance difference scales in Fig. 4.…”

Silicon Nanotexture Surface Area Mapping Using Ultraviolet Reflectance

“…The E1 and E2 peaks have been shown to be sensitive to silicon material quality and the E2 peak in particular to surface etching. The offset between R(E1) and R(E2) has been used to monitor the crystallinity of thin silicon films [27], [28]. R(E2) has been used to monitor silicon surface roughness [19] and has also been shown to clearly trend with porosity for electrochemically etched porous silicon [21].…”