Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method

Abstract

The thermal conductivity of SiO2 thin films prepared using various procedures has been studied using a 3ω method. The thermal conductivity of SiO2 thin films of above approximately 500 nm thickness decreases as the porosity of the specimen, which is determined by infrared absorption spectroscopy, increases. Below approximately 250 nm thickness, the observed thermal conductivity of the SiO2 thin films systematically decreases as a function of film thickness. The data have been analyzed based on a SiO2-thickness-independent thermal conductivity and interfacial resistance. The total estimated interfacial resistance between the metal strip and the film, and between the film and the substrate is about 2×10−8 m2 KW−1.

Thickness-dependent thermal properties of amorphous insulating thin films measured by photoreflectance microscopy

“…compared to values reported by the 3 method [34] and some similar techniques [35]. These discrepancies could be related to the heat generation/collection method.…”

Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

“…Unlike in metals, the breakdown in CNTs was attributed to the resistive heating or local oxidation, assisted by defects [11][12][13][14]. Thermal conductivity of SiO 2 K=0.5 -1.4 W/mK at RT [19], is more than 1000-times smaller than that of Si, K=145 W/mK, which suggests that the use of materials with higher K, directly below graphene, can improve graphene's J BR , and reach the maximum values observed for CNTs.…”

Thermal aware design and comparative analysis of a high performance 64-bit adder in FD-SOI and bulk CMOS technologies

“…Therefore, these two layers are independently modelled. The thermal conductance of the SiO 2 film with 50 nm thickness is approximately equal to 0.8 Wm −1 K −1 [25,26]. The thermal conductance of the Si film with 10 nm thickness is approximately 13.7 Wm −1 K −1 .…”

“…8b) shows that the generated heat is locally translated into temperature since the thermal conductance of the FDSOI structure is quite low at the heat generation spots. This is mainly due to the SiO 2 isolation layer, Si-SiO 2 thermal boundary resistance [15] and the reduced thermal conductance of silicon and SiO 2 thin films [25,26], which were previously explained. The thermal simulations for the bulk and the FDSOI geometries are repeated by using the block level heat generation inputs of Fig.…”

“…The boundary between Si and SiO 2 creates a temperature jump, hence a finite interface thermal conductance [14,15]. The value of interface thermal resistance (R i ) is set to 2×10 −8 m 2 KW −1 [25,26] (Fig. 5).…”