1993
DOI: 10.1109/16.231581
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Measurements of gate voltage dependence of electron mobility in delta -doped HFET's

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Cited by 7 publications
(8 citation statements)
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“…The enhanced surface roughness scattering at higher V gs regime leads to a decrease of μ eff , while Coulomb scattering due to fixed interface state charges and ionized impurity charges is responsible for the reduction of μ eff at negative V gs . , In addition, the μ eff − V g dependence is asymmetric with a fast roll-off at voltage close to the threshold voltage. This feature is also in accordance with the observations in GaAs thin film MOSFET, indicating the good subthreshold characteristics of the top-gate CdSe:In NWFET. From Figure d, the peak mobility reaches 166 cm 2 /(V·s) at V ds = 1 V and V gs = −0.1 V, which is the highest value reported thus far for CdSe nanomaterials , and films, , although it is still smaller than that reported for single-crystal CdSe and Si NWFET devices (350 cm 2 /(V·s)) .…”
Section: Resultssupporting
confidence: 90%
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“…The enhanced surface roughness scattering at higher V gs regime leads to a decrease of μ eff , while Coulomb scattering due to fixed interface state charges and ionized impurity charges is responsible for the reduction of μ eff at negative V gs . , In addition, the μ eff − V g dependence is asymmetric with a fast roll-off at voltage close to the threshold voltage. This feature is also in accordance with the observations in GaAs thin film MOSFET, indicating the good subthreshold characteristics of the top-gate CdSe:In NWFET. From Figure d, the peak mobility reaches 166 cm 2 /(V·s) at V ds = 1 V and V gs = −0.1 V, which is the highest value reported thus far for CdSe nanomaterials , and films, , although it is still smaller than that reported for single-crystal CdSe and Si NWFET devices (350 cm 2 /(V·s)) .…”
Section: Resultssupporting
confidence: 90%
“…35,36 In addition, the µ eff -V g dependence is asymmetric with a fast roll-off at voltage close to the threshold voltage. This feature is also in accordance with the observations in GaAs thin film MOSFET, 37 indicating the good subthreshold characteristics of the top-gate CdSe:In NWFET. From Figure 3d, the peak mobility reaches 166 cm 2 /(V • s) at V ds ) 1 V and V gs ) -0.1 V, which is the highest value reported thus far for CdSe nanomaterials 27,28 and films, 38,39 although it is still smaller than that reported for single-crystal CdSe 32 and Si NWFET devices (350 cm 2 /(V • s)).…”
Section: Resultssupporting
confidence: 90%
“…Here, g m is the intrinsic transconductance, V DS is the voltage drop across L G , and C is the gate capacitance, which is equal to the oxide capacitance in the linear regime. , Note that at both positive and negative gate voltages, the field-effect mobility is low and increases as V GS approaches the flat band voltage, V fb , which is typically less than 0 V due to the presence of positively charged donor-type surface states that shift V fb to negative values. The μ FE − V GS dependence shown in Figure a follows the same trends as those observed in metal-oxide-semiconductor FETs and heterojunction FETs . For positive voltages in the accumulation regime, μ FE decreases due to surface roughness scattering. , For negative gate voltages below V fb in the depletion regime, Coulomb scattering due to fixed oxide charges, interface state charges, and ionized impurity charges reduces μ FE .…”
supporting
confidence: 63%
“…Coulomb scattering is dominant at low carrier densities and is reduced at higher densities due to screening of the charged centers’ potential. The μ FE − V GS dependence is typically asymmetric, with fast roll-off at voltages close to the threshold voltage. , For the InAs NWFETs, however, the large surface state density leads to poor subthreshold characteristics and to the more symmetric appearance of the μ FE − V GS curve as shown in Figure a.…”
mentioning
confidence: 98%
“…As the gate voltage approaches the flat-band voltage (typically negative due to donor surface charges), the mobility peaks, and then reduces as V GS increases in the accumulation region near the surface due to interface roughness scattering [64,65]. The symmetric behavior of μ FE -V GS observed here is due to the poor sub-threshold characteristics (non-steep turn-on characteristics) of the InAs NWFETs and should be typically more steep in the absence of surface states for voltages below the flat-band voltage [64,66].…”
Section: Field Dependencementioning
confidence: 69%