Mechanism of enhanced photoluminescence of Tb ions in hydrogenated silicon-rich silicon oxide films

Klak, M.M.; Zatryb, G.; Wójcik, J.; Misiewicz, J.; Mascher, P.; Podhorodecki, A.

doi:10.1016/j.tsf.2016.04.050

Cited by 6 publications

(4 citation statements)

References 37 publications

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“…The spectral shapes also depend on the local environment surrounding the Tb 3+ ions, and such spectral shape is often observed in comparable materials. 59,60 …”

Section: Resultsmentioning

confidence: 99%

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Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition

et al. 2018

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“…The spectral shapes also depend on the local environment surrounding the Tb 3+ ions, and such spectral shape is often observed in comparable materials. 59,60 …”

Section: Resultsmentioning

confidence: 99%

“…The spectral shapes also depend on the local environment surrounding the Tb 3+ ions, and such spectral shape is oen observed in comparable materials. 59,60 The inset of Fig. 6b compares the PL emission intensities at RT of Si/Tb thin lms with different Tb concentrations in the deposit.…”

Section: Optical Propertiesmentioning

confidence: 99%

Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition

et al. 2018

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“…Silicon is the principal component of glass, ceramics and for most semiconductor devices an intrinsic semiconductor, although the intensity of its semiconduction is highly increased by introducing small quantities of impurities [11][12][13]. Due to the strong bonding between Si and C, silicon carbide (CSi) films, with such properties as a high melting point, oxidation resistance, high erosion resistance, high hardness and strength [14][15][16], are good materials for reactive environments and electronic devices [17], as well as abrasion and cutting applications [18,19].…”

Section: Introductionmentioning

confidence: 99%

Correlation study of nanocrystalline carbon doped thin films prepared by a thermionic vacuum arc deposition technique

Dinca-Balan

Vladoiu

Mandes

et al. 2017

J. Phys. D: Appl. Phys.

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The synthesis of Ag, Mg and Si nanocrystalline, embedded in a hydrogenfree amorphous carbon (aC) matrix, deposited by a high vacuum and free buffer gas technique, were investigated. The films with compact structures and extremely smooth surfaces were prepared using the thermionic vacuum arc method in one electron gun configuration, on glass and silicon substrates. The surface morphology and wettability of the obtained multifunctional thin films were investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and free surface energy (FSE) by See System. The results from the TEM measurements show how the Ag, Mg and Si interacted with carbon and the influence these materials have on the thin film structure formation and the grain size distribution. SEM correlated with EDX results reveal a very precise comparative study, regarding the quantity of the elements that morphed into carbides nanostructures. Also, the FSE results prove how different materials in combination with carbon can make changes to the surface properties.

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“…The second one focus on extrinsic emission, which is produced by doping the material (usually introducing rare earth ions) [3,17].…”

Section: Introductionmentioning

confidence: 99%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

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Mechanism of enhanced photoluminescence of Tb ions in hydrogenated silicon-rich silicon oxide films

Cited by 6 publications

References 37 publications

Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition

Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition

Correlation study of nanocrystalline carbon doped thin films prepared by a thermionic vacuum arc deposition technique

Luminescent Devices Based on Silicon-Rich Dielectric Materials

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