Melting of Au and Al in nanometer Fe/Au and Fe/Al multilayers under swift heavy ions: A thermal spike study

Ultraviolet and Infrared luminescent Au-rich nanostructure growth in SiO2 by burrowing and inverse Oswald ripening process

“…The calculation code solves numerically the electronic and atomic heat diffusion Eqs (1) and (2), and provides the space and time evolution of energy per target atom, which is equivalent to temperature, as the main output. The calculations were performed in superheating scenario 36 . In Fig.…”

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

“…This causes an increment in the lattice temperature that can exceed the melting temperature. Therefore, if one of the components is sensitive to the electronic energy loss, the melting phase will appear at the interface of bi-layers system and the mixing between two different materials could occur due to the high diffusivity of components in a liquid phase [48][49][50]. Consequently, one can suppose that intermixing could be attributed to interdiffusion in the molten ion track, provided that, at least one of the components is sensitive to S e deposition.…”

“…In order to explain the interface mixing linked to the evolution of the temperature in a multilayer system the exchange of the energy between layers has to be included. This was done by Wang et al [49] for the Ni-Ti system and applied to Fe-Au and Fe-Al by Chettah et al [50]. The model developed by Szenes [61] has been discarded because it does not take into account energy exchange in the electronic Table 1 Lattice thermal parameters of silicon.…”

Change in the microstructure at W/Si interface and surface by swift heavy ions

“…During this process, the energy transfer by heat diffusion in the electronic and atomic systems can be described by two coupled differential equations [14]. This heat Diffusion coefficient can be calculated by equation…”