Metal contacts to II-VI semiconductors: CdS and CdTe

Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors

“…The gate electrode was also deposited by the thermal evaporation of Al on the back side of the substrate. In order to obtain better contact between the Al electrodes and the CdS thin film, the substrate was treated at 300°C for 1 h under reduced pressure [14].…”

Charge Transport Mechanisms in Au–CdTe Space-Charge-Limited Schottky Diodes

“…The variation in the reported value for the Schottky barrier height is likely due to the effect of surface states. A study on the dependence of the barrier height on the work function of metal on cleaved and chemically treated surfaces of CdTe has revealed the importance of the surface defects, and thus, the surface states [27].…”

“…For the same set of the interface parameters as used before, x 0X57. Taking F 0 0X875 eV as measured, j m 5X1 eV [27], c S 4X28 eV [16] and E g 1X50 eV, equation (8) Fig. 5.…”

Application of photoelectron spectroscopy methods for investigation of subsurface layers of amorphous chalcogenide materials

“…При опроміненні поверхні фотонами баланс енергії у спрощеному вигляді може бути записаний так: [15][16][17][18]. Так, результати дослідження легованих сріблом плівок As2Sе3 були опубліковані ще в 1981 році [19].…”