Metal dichalcogenide nanosheets: preparation, properties and applications

Abstract

Two-dimensional (2D) nanomaterials have received much attention in recent years, because of their unusual properties associated with their ultra-thin thickness and 2D morphology. Besides graphene which has aroused tremendous research interest, other types of 2D nanomaterials such as metal dichalcogenides have also been studied and applied in various applications including electronics, optoelectronics, energy storage devices, and so on. In this tutorial review, we will take MoS(2) as a typical example to introduce the latest research development of 2D inorganic nanomaterials with emphasis on their preparation methods, properties and applications.

Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

“…The prominent A 1g mode relates to the out‐of‐plane vibration of Se atoms, while the E 2g mode is associated with the in‐plane vibration of Mo and Se atoms (see the inset in Figure 1a). Prior research results indicate that the change in layer number of MoSe 2 nanosheets will cause a significant difference in the locations of scattering modes in Raman spectra; the E 2g vibration will redshift, whereas the A 1g vibration will blueshift, with increasing MoSe 2 layer number 20, 57. Considering the large thickness of the MoSe 2 film in this work, its Raman spectra are more likely to be identical to that of the MoSe 2 bulk material or multilayer nanosheets.…”

“…As one of the most significant members of 2D materials family, transition metal dichalcogenides (TMDs), such as MoS 2 , MoSe 2 , WS 2 , and WSe 2 , have attracted tremendous attention currently due to their outstanding electronic, optical, and mechanical properties 11, 12, 13, 14, 15, 16, 17, 18, 19. Monolayer MoSe 2 is a sandwich structure consisting of one Mo atom and two Se atoms, and the different layers are interacted by van der Waals force 20, 21. Like MoS 2 , the properties of MoSe 2 are also related with layer numbers; monolayer MoSe 2 exhibits a direct bandgap of 1.6 eV, whereas it changes into indirect bandgap of 1.1 eV for bulk or multilayer MoSe 2 22, 23.…”

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

“…These 2DLMs possess different properties such as electronic structures, large specific surface area, and the quantum confinement of electrons due to the ultrathin thickness compared with their bulk counterparts, thus paving a new way for the next generation electronic, optical, optoelectronic, and flexible systems 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15. Taking graphene, for example, the single layer of graphite has promising applications in broadband optical modulators16 and ultrafast high frequency photosensors17 due to the linear dispersion of the Dirac electrons 18.…”

Critical Insight into the Relentless Progression Toward Graphene and Graphene‐Containing Materials for Lithium‐Ion Battery Anodes

“…One of the main innovations in 2011 may be the combination of graphene with another 2D material such as MoS 2 , belonging to the family of transition metal dichalcogenides. [ 128 ] Through the clever use of sulfocarbamide [ 129,130 ] or L-cysteine, [ 131 ] W. Chen and K. Chang obtained several graphene/MoS 2 hybrids with enhanced cycling stability and larger specifi c gravimetric capacity than bare MoS 2 , even at high specifi c currents (e.g., 1 A g −1 ). Particularly, the biomolecular-assisted synthetic approach (i.e., L-cysteineassisted solution-phase method) [ 131 ] enabled, for the composites with a Mo:C molar ratio of 1:2, a specifi c gravimetric capacity of ca.…”