Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates

Abstract

In 0:5 Al 0:5 As/In 0:5 Ga 0:5 As HEMT's have been grown metamorphically on GaAs substrates oriented 6 off (100) toward (111)A using a graded InAlAs buffer. The devices are enhancement mode and show good dc and RF performance. The 0.6-m gate length devices have saturation currents of 262 mA/mm at a gate bias of 0.7 V and a peak transconductance of 647 mS/mm. The 0.6 m 2 2 2 3 mm devices tested on-wafer have output powers up to 30 mW/mm and 46% power-addedefficiency (PAE) at 1 V drain bias and 850 MHz. When biased and matched for best efficiency performance, this same device has up to 68% PAE at V V V d d d = 1 V.

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

“…Normally off, E-mode GaAs metal-semiconductor field-effect transistors ͑MES-FETs͒ and GaAs high-electron-mobility transistors ͑HEMTs͒ have been demonstrated by various research groups. [1][2][3][4] However, in GaAs MESFETs and HEMTs, the Schottky-contact gate formation suffers from high leakage current, which limits the input dynamic range, increases the noise figure, and prevents the large scale integration of these transistors. In order to restrain the gate leakage current, insulating layers were introduced between metal gates and compound semiconductors through different techniques such as in situ molecular beam expitaxy ͑MBE͒ Ga 2 O 3 ͑Gd 2 O 3 ͒ ͑Refs.…”

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

“…[7−9] Metamorphic crystal growth has been widely used for electronic components, and very high-performance metamorphic electronic devices, including high electron mobility transistors and heterojunction bipolar transistors, have been realized. [10,11] For semiconductor laser, metamorphic layers act as virtual substrate, making the lattice of the active region match with the substrate. Recently, 1.3 µm GaAs-based metamorphic InGaAs QW lasers have been demonstrated at room temperature.…”