Metrology needs for through-silicon via fabrication

Vartanian, Victor; Allen, Richard A.; Smith, Larry; Hummler, Klaus; Olson, Steve; Sapp, Brian

doi:10.1117/1.jmm.13.1.011206

Cited by 28 publications

(17 citation statements)

References 21 publications

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“…Optical interferometry and reflectometry are the main nondestructive metrological methods for this purpose [11][12][13] but their use is limited for smaller diameter TSVs due to the requirement of obtaining a measurable signal of reflected light from the bottom of the TSV. The nondestructive 3D metrology of deep-etched structures with an aspect ratio of more than 10 and patterns with lateral dimensions in the range below 5 lm remains a challenge.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

Through silicon via profile metrology of Bosch etching process based on spectroscopic reflectometry

Fursenko

Bauer

Marschmeyer

et al. 2015

Microelectronic Engineering

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Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

Through silicon via profile metrology of Bosch etching process based on spectroscopic reflectometry

Fursenko

Bauer

Marschmeyer

et al. 2015

Microelectronic Engineering

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“…1,2 These changing requirements have dramatically altered manufacturing metrology, both in terms of the available technology and its method of application.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes

Choi

Park

Ahn

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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The decreasing size of semiconductor features and the increasing structural complexity of advanced devices have placed continuously greater demands on manufacturing metrology, arising both from the measurement challenges of smaller feature sizes and the growing requirement to characterize structures in more than just a single critical dimension. For scanning electron microscopy, this has resulted in increasing sophistication of imaging models. For critical dimension atomic force microscopes (CD-AFMs), this has resulted in the need for smaller and more complex tips. Carbon nanotube (CNT) tips have thus been the focus of much interest and effort by a number of researchers. However, there have been significant issues surrounding both the manufacture and use of CNT tips. Specifically, the growth or attachment of CNTs to AFM cantilevers has been a challenge to the fabrication of CNT tips, and the flexibility and resultant bending artifacts have presented challenges to using CNT tips. The Korea Research Institute for Standards and Science (KRISS) has invested considerable effort in the controlled fabrication of CNT tips and is collaborating with the National Institute of Standards and Technology on the application of CNT tips for CD-AFM. Progress by KRISS on the precise control of CNT orientation, length, and end modification, using manipulation and focused ion beam processes, has allowed us to implement ball-capped CNT tips and bent CNT tips for CD-AFM. Using two different generations of CD-AFM instruments, we have evaluated these tip types by imaging a line/space grating and a programmed line edge roughness specimen. We concluded that these CNTs are capable of scanning the profiles of these structures, including re-entrant sidewalls, but there remain important challenges to address. These challenges include tighter control of tip geometry and careful optimization of scan parameters and algorithms for using CNT tips.

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“…Dimensional metrology of high aspect ratio (HAR) features [1–11] will become more challenging as technology progresses, particularly in memory applications where designs are evolving from planar to vertical architectures with multi-level gates assembled in 3-D structures [3, 11–20]. The basic building blocks of these features are deep trenches and holes in oxide, silicon, or multiple alternating layers of oxide and silicon.…”

Section: Introductionmentioning

confidence: 99%

Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy

Attota¹,

Weck

Kramar³

et al. 2016

Opt. Express

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In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. Metrology and process control of three-dimensional (3-D) high-aspect-ratio (HAR) features are becoming increasingly important and also challenging. In this paper we present a feasibility study of through-focus scanning optical microscopy (TSOM) for 3-D shape analysis of HAR features. TSOM makes use of 3-D optical data collected using a conventional optical microscope for 3-D shape analysis. Simulation results of trenches and holes down to the 11 nm node are presented. The ability of TSOM to analyze an array of HAR features or a single isolated HAR feature is also presented. This allows for the use of targets with area over 100 times smaller than that of conventional gratings, saving valuable real estate on the wafers. Indications are that the sensitivity of TSOM may match or exceed the International Technology Roadmap for Semiconductors (ITRS) measurement requirements for the next several years. Both simulations and preliminary experimental results are presented. The simplicity, lowcost, high throughput, and nanometer scale 3-D shape sensitivity of TSOM make it an attractive inspection and process monitoring solution for nanomanufacturing.

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Metrology needs for through-silicon via fabrication

Cited by 28 publications

References 21 publications

Through silicon via profile metrology of Bosch etching process based on spectroscopic reflectometry

Through silicon via profile metrology of Bosch etching process based on spectroscopic reflectometry

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes

Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy

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