Micro-ball wafer bumping for flip chip interconnection

Hashino, Eiji; Shimokawa, Kuniyasu; Yamamoto, Yasutaka; Tatsumi, Kohei

doi:10.1109/ectc.2001.927922

Cited by 7 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, a new ball-place-bumping method has been developed by the authors. 13) This technique industrially achieved fine pitch bumping and a decrease in the limitation concerning the solder composition of bumps. With this method, solders for flip chip interconnection will change to ternary or more systems because of beneficial properties such as thermal fatigue.…”

Section: Introductionmentioning

confidence: 99%

IMC Growth of Solid State Reaction between Ni UBM and Sn–3Ag–0.5Cu and Sn–3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

et al. 2005

View full text Add to dashboard Cite

The bumps for flip chip interconnection are becoming smaller and smaller. Since lead-free solders became popular, Ni-based under bump metallization (UBM) has attracted attention in recent years because of their slower reaction rate than traditional Cu-based UBM. However, there is little data concerning the solid state reaction between small lead-free solder bumps and Ni-based UBM. In this work, Sn-3Ag-0.5Cu and Sn-3.5Ag solder bumps were fabricated with 110-mm-diameter solder balls on electrolytic Ni, and the growth kinetics of intermetallic compound (IMC) layers and the morphology of bumps during long-term aging were investigated. The IMC layer exhibited parabolic growth, and the activation energy values for the Sn-3Ag-0.5Cu or Sn-3.5Ag solder/Ni UBM were obtained. The growth rate accelerated at 463 K or above. (Ni,Cu) 3 Sn 4 or Ni 3 Sn 4 IMC was formed mainly at the solder/Ni interface after long-term aging. Large voids were formed at the solder/IMC interface at 463 K or above. The voids are the result of stress by volume expansion due to IMC growth. Coarse Ag 3 Sn grains were observed adjacent to the voids and contributed to void initiation.

show abstract

Section: Introductionmentioning

confidence: 99%

IMC Growth of Solid State Reaction between Ni UBM and Sn–3Ag–0.5Cu and Sn–3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

et al. 2005

View full text Add to dashboard Cite

show abstract

“…13 Recently, the company constructed a mass production line for forming solder bumps of 120 µm or 150 µm in diameter for applications in consumer electronics. 14 The reliability of MBB technology has been also demonstrated with lead-free solders of various compositions and Ti/NiV/Cu-UBM.…”

Section: Solder Ball Placementmentioning

confidence: 99%

An overview of Pb-free, flip-chip wafer-bumping technologies

Kang

Gruber

Shih

2008

JOM

View full text Add to dashboard Cite

“…Since the introduction of the flip chip technology by IBM in the 1960s [12], various flip chip bumping technologies were reported, including Physical Vapor Deposition (PVD) [13][14][15], electroplating [16][17][18], liquid metal jetting [19], ball or stud bumping using conventional wire-bonding process [20,21], stencil printing [22], and micro-ball bumping [23][24][25]. Although the PVD methods, which include sputtering and evaporation, are proven and popular technologies, the uneconomical material consumption and large vacuum chamber result high cost.…”

Section: Introductionmentioning

confidence: 99%

Chip scale packaging with surface mountable solder ball terminals for microsensors

Lee¹,

Lee

et al. 2009

2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

View full text Add to dashboard Cite

This paper presents a simple and low-cost flip chip bumping method with vertical feedthroughs for MEMS WLCSP. The vertical feedthroughs are fabricated on glass wafer using sand-blasting, and these provide inherent aligning jig for microball arrangement. The experimental evaluations using MEMS accelerometer are also presented. The proposed method can be a more cost-effective solution by eliminating the conventional expensive and complex process including electroplating or ballaligning jig. The feasibility of WLCSP is experimentally demonstrated by testing the developed devices.

show abstract

Micro-ball wafer bumping for flip chip interconnection

Cited by 7 publications

References 1 publication

IMC Growth of Solid State Reaction between Ni UBM and Sn–3Ag–0.5Cu and Sn–3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

IMC Growth of Solid State Reaction between Ni UBM and Sn–3Ag–0.5Cu and Sn–3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

An overview of Pb-free, flip-chip wafer-bumping technologies

Chip scale packaging with surface mountable solder ball terminals for microsensors

Contact Info

Product

Resources

About

Micro-ball wafer bumping for flip chip interconnection

Cited by 7 publications

References 1 publication

IMC Growth of Solid State Reaction between Ni UBM and Sn&ndash;3Ag&ndash;0.5Cu and Sn&ndash;3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

IMC Growth of Solid State Reaction between Ni UBM and Sn&ndash;3Ag&ndash;0.5Cu and Sn&ndash;3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

An overview of Pb-free, flip-chip wafer-bumping technologies

Chip scale packaging with surface mountable solder ball terminals for microsensors

Contact Info

Product

Resources

About

IMC Growth of Solid State Reaction between Ni UBM and Sn–3Ag–0.5Cu and Sn–3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

IMC Growth of Solid State Reaction between Ni UBM and Sn–3Ag–0.5Cu and Sn–3.5Ag Solder Bump Using Ball Place Bumping Method during Aging