Micrometer-scaled Channel Lengths of Organic Field-effect Transistors Patterned by Using PEDOT/PSS Microfibers

Abstract

We have easily fabricated channel patterns of organic field-effect transistors (OFET), in which channel lengths were ca. 5 μm, by using wet-spun poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS) microfibers with diameters of ca. 5 μm. Pentacene-based OFETs with a bottom-contacted configuration, fabricated on the channel patterns, showed a hole mobility of 10−3 cm2 V−1 s−1 simply reflecting FET characteristics of the pentacene, and showed large current of 8 μA (VDS=−50 V; VG=−50 V) reflecting shorter channel length of the devices.

Low-Voltage Pentacene Field-Effect Transistors Fabricated on High-Dielectric-Constant Strontium Titanate Insulator

“…We fabricated the FET channels by utilizing the poly(3,4-ethylenedioxythiophene)/poly(4styrenesulfonate) (PEDOT/PSS) microfibers, similarly to that in the procedure previously reported by us. 11,12) The PEDOT/PSS microfibers were fabricated by a wet-spinning technique. 13,14) Pentacence-based FETs with top-contact configuration were fabricated on the channel patterns.…”

“…We fabricated pentacene FETs following the procedure as previously reported. 11,12) The channel length was 4 mm and the grain size of the deposited pentacene was ca. 456 nm, on basis of SEM and AFM observations.…”

Poly(3,4‐ethylenedioxythiophen)/Poly(4‐styrenesul‐fonate): Thin Films and Microfibers

“…FET Channel Lengths Fabricated by Using the Microfiber as a Shadow Mask [19][20][21][22][23] Organic field-effect transistors (FETs) are considered to be used in flexible flat displays as power source. Short channel length of the organic FET would provide large drain current.…”

Low-Voltage P3HT Field-Effect Transistors Fabricated Using High-k Gate Insulators

“…Organic field-effect transistors (FETs) have been extensively studied from both academic and technological aspects [1][2][3][4][5]. Regio-regular poly(3-hexylthiophene) (denoted as P3HT) is a well-known p-type organic semiconductor which can be used to fabricate FET devices by wet-process [1].…”