Microstrip thin-film MCM-D technology on high-resistivity silicon with integrated through-substrate vias

Abstract

The integration of through-substrate vias on 100µm thick high-resistivity silicon (HRSi) wafers within the thin-film multi-chip module technology (MCM-D) is demonstrated in this paper. High quality integrated lumped elements such as thin-film resistors, capacitors and inductors are demonstrated on a microstrip configuration within an MCM-D technology. Microstrip lines integrated on the thin HRSi present a quality factor 2.5 times higher than CPW lines with similar dimensions on AF45 glass, highlighting the advantages of using microstrip type of circuits. High-quality distributed-element bandpass filters at 30GHz are presented proving the ability of the technology to integrate high frequency circuits as well. Being able to integrate high quality passive components at various frequencies, it is a powerful technology platform for the integration of high performance system in a package (SiP) modules.Index Terms -High-resistivity silicon, system in a package (SiP), MCM-D, thin-film, microstrip, integrated passive device.

V‐band low phase‐noise oscillator based on a cavity resonator integrated in the silicon substrate of the MCM‐D platform

“…The cross section of the MCM‐D integration platform with integrated passives and cavity resonator is shown in Figure 2(a). IMEC's MCM‐D platform is largely described by Posada [11] and Carchon [12], both focusing on RF integration. The platform incorporates integrated passives realized in the top thin metallization layers, produced by using sputter methods.…”