Microstructural characterization of quantum dots with type-II band alignments

Sarney, Wendy L.; Little, John W.; Svensson, Stefan P.

doi:10.1016/j.sse.2006.04.016

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…Studies of quantum structures with various combinations of narrow-gap 3-5 materials based on antimony have recently been reported [5][6][7][8]. Typically, most of these quantum structures were grown on substrates such as InAs, InP, and GaSb due to the lattice match with matrix materials [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

Lee

Song

Kim

et al. 2012

Quantum Sensing and Nanophotonic Devices IX

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InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown by Stranski-Krastanov (S-K) are ~36.8 nm and ~3.1 nm, respectively. The density of QDs is ~2.5×10 10 cm -2 . The size distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ~159 nm in length, ~63 nm in width, and ~11 nm in height. A large reduction of volume of InSb structures between those in the matrix and those on the surface was found. Threading dislºCations resulting from the Q-dash structures were also observed. This may be attributed to As-Sb exchange.

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Section: Introductionmentioning

confidence: 99%

“…Typically, most of these quantum structures were grown on substrates such as InAs, InP, and GaSb due to the lattice match with matrix materials [6][7][8]. Although GaAs substrate based type-2 quantum structures (InAsSb QDs on GaAs) were reported by J.…”

Section: Introductionmentioning

confidence: 99%

MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

Lee

Song

Kim

et al. 2012

Quantum Sensing and Nanophotonic Devices IX

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Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix

2013

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Bulk InAsSb with 0.1 eV bandgap on GaAs

Sarney

Svensson

et al. 2017

Journal of Applied Physics

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We report on the growth of near-minimum bandgap (0.1 eV) bulk InAs0.54Sb0.46 on GaAs with pronounced photoluminescence. Combining strain-mediating techniques effectively manages the ∼10% lattice mismatch. An interfacial misfit (IMF) dislocation array allows a GaAs substrate and a GaSb buffer layer to act as a direct substitute for a conventional GaSb substrate. We further increase the lattice constant with a linearly graded metamorphic buffer layer of AlGaInSb, upon which we grow an AlInSb virtual substrate with the targeted lattice constant of the active InAsSb region. We observe that the graded buffer not only manages the mismatch between GaSb and InAsSb but also reduces the density of residual threading dislocations from the GaSb/GaAs IMF by a factor of ∼10×. Material characterization demonstrates the viability of using the coupled approach of metamorphic, graded buffers and IMF arrays to manage the large lattice mismatch between the substrate and the mixed group V ternary InAsSb.

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Microstructural characterization of quantum dots with type-II band alignments

Cited by 3 publications

References 5 publications

MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix

Bulk InAsSb with 0.1 eV bandgap on GaAs

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