Microstructural evolution of Ge/Si(100) nanoscale islands

Smith, David J.; Chandrasekhar, D.; Chaparro, S. A.; Crozier, Peter; Drucker, Jeffery; Floyd, M.; McCartney, Martha R.; Zhang, Y.

doi:10.1016/j.jcrysgro.2003.07.025

Cited by 35 publications

(20 citation statements)

References 48 publications

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“…36 Neglecting compositional nonuniformity, it has been estimated that the actual Ge concentrate in the islands is x = 0.82 and 0.43, respectively, at 450°C and 700°C. 37 This gives a very preliminary estimate for the scaling exponent Ӎ 2.2 consistent with the asymptotic value = 2 derived above, although more experiments are required for a reliable conclusion.…”

Section: Discussionsupporting

confidence: 82%

Kinetic Monte Carlo simulation of shape transition of strained quantum dots

Lam

2010

Journal of Applied Physics

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The pyramid-to-dome transition in Ge x Si 1−x on Si͑100͒ initiated by step formation on pyramidal quantum dots is atomistically simulated using a multistate lattice model in two-dimensions incorporating effective surface reconstructions. Under quasiequilibrium growth conditions associated with low deposition rates, the transition occurs at island size n c following ͱ n c ϳ x −1.69 independent of temperature and deposition rate. The shape transition is found to be an activated process. Results are explained by a theory based on simple forms of facet energies and elastic energies estimated using a shallow island approximation. An asymptotic scaling relation n c 1/d ϳ x −2 for x → 0 applicable to d = 2 or 3 dimensions is derived. The shape transition energy barrier can be dominated by the interface energy between steep and shallow facets.

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Section: Discussionsupporting

confidence: 82%

Kinetic Monte Carlo simulation of shape transition of strained quantum dots

Lam

2010

Journal of Applied Physics

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“…In particular, the vertical concentration profile and lateral uniformity in the dome island is in excellent agreement with an EELS study of the Ge island concentration of dome islands as a function of temperature. 15 The results are also in agreement with the anomalous x-ray scattering measurements 16 that showed a rapid increase of the Ge concentration in the dots in the first 2 nm from the surface. The line profiles parallel to the surface are useful to determine whether the dots can be modelled by a shell model with the Ge composition decreasing radially towards the centre of the dot or by a lamellar structure where the Ge gradient is perpendicular to the dot/substrate interface.…”

Section: A Ge Pyramid and Dome Dotssupporting

confidence: 89%

Probing the composition of Ge dots and Si∕Si1−xGex island superlattices

Baribeau¹,

Wu²,

Lockwood³

2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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/npsi/ctrl?action=rtdoc&an=12744813&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744813&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca.

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“…However, there is still a controversial matter with the origin of the anisotropic shape because an intermixing between nanocrystals and substrates partially and locally can relax the elastic strain. The intermixing makes the growth process of nanocrystals very complex in cases of Ge/Si [10] and InAs/GaAs [11].…”

Section: Introductionmentioning

confidence: 99%