1992
DOI: 10.1557/proc-281-709
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Microstructure Analysis of Thermally Stable Ohmic Contact to Both n and p+-GaAs

Abstract: A thermally stable Pd/Ge/Ti/Pt/ ohmic contact with low specific contact resistance was formed on both n and p+-GaAs. The lowest specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω.cm2 for the n and p+-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018cm−3, and the p+-GaAs was doped with carbon to 5×1019 cm−3. Interfacial reactions and element diffusions of the contacts were investigated by using transmission electron microscopy, Auger electron spectrometry with depth profiles. All the contac… Show more

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Cited by 11 publications
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“…410 C is a typical temperature for testing the thermal stability of ohmic contacts to GaAs [2]. Thermal stability of the Pd/Ge metallizations at and above 410 C still requires further studies [2], [4].…”
Section: Introductionmentioning
confidence: 99%
“…410 C is a typical temperature for testing the thermal stability of ohmic contacts to GaAs [2]. Thermal stability of the Pd/Ge metallizations at and above 410 C still requires further studies [2], [4].…”
Section: Introductionmentioning
confidence: 99%