2022
DOI: 10.1016/j.jmmm.2021.168777
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Microstructure and magnetic properties of FeCoHfN thin films deposited by DC reactive sputtering

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Cited by 9 publications
(4 citation statements)
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“…Soft magnetic thin films have been widely used for low-frequency devices such as transformers, generators, motors, and high-frequency applications. Recently, the research focused on soft magnetic thin films operating on high frequency in order to miniaturize and integrate microelectronic devices [1]. The designer and developers of modern electronic devices seek small-size, lightweight, high-speed, and cost-effective devices.…”
Section: Introductionmentioning
confidence: 99%
“…Soft magnetic thin films have been widely used for low-frequency devices such as transformers, generators, motors, and high-frequency applications. Recently, the research focused on soft magnetic thin films operating on high frequency in order to miniaturize and integrate microelectronic devices [1]. The designer and developers of modern electronic devices seek small-size, lightweight, high-speed, and cost-effective devices.…”
Section: Introductionmentioning
confidence: 99%
“…AGNETO-ELECTRIC (ME) materials which possess both magnetic and electric properties have attracted much attention for their applications such as magnetic memory and magnetic sensors. Magnetic metal-insulator nanogranular films, which consist of nanometer-sized magnetic metal (e.g., Co, Fe) granules embedded in an insulating (e.g., MgF 2 , Al 2 O 3 ) matrix, belong to ME materials and exhibit a variety of intriguing functionalities: high-frequency soft magnetic properties [1]- [3], Hall effect [4]- [6], tunnel magnetoresistance effect [7]- [9], tunnel magneto optic effect [10], and giant Faraday effect [11]. Additionally, our group discovered a new ME effect, tunneling magneto-dielectric (TMD) effect, which causes a magnetic field-induced increase in the dielectric permittivity of nanogranular films [12].…”
Section: Introductionmentioning
confidence: 99%
“…With the development of the electronic information industry, the high frequency, miniaturization and integration are required for the electronic devices [ 1 , 2 , 3 ]. According to the Snoek’s limit, the initial permeability is inversely proportional to the ferromagnetic resonance frequency under a certain saturation magnetization [ 4 ].…”
Section: Introductionmentioning
confidence: 99%