Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

Yoon, Hyung Sup; Min, Byung Gil; Lee, Jong Min; Kang, Dong Min; Ahn, Ho−Kyun; Kim, Haecheon; Lim, Jong−Won

doi:10.1109/led.2016.2612624

Cited by 25 publications

(18 citation statements)

References 19 publications

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“…In an InAlAs/InGaAs HEMT device used as a low noise amplifier, it is common to reduce the resistance of the gate electrode by increasing the cross‐sectional area of the gate electrode to improve noise characteristics [13]. The gate foot, which represents the actual gate length, is made small, and the gate head is enlarged so that the cross‐sectional shape is a T‐shape.…”

Section: Methodsmentioning

confidence: 99%

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

et al. 2022

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We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two‐step electron‐beam lithography process using a three‐layer resist and gate recess etching process using citric acid. An electron‐beam lithography process was developed to fabricate a T‐shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three‐layered resist and two‐step electron beam exposure and development. Citric acid‐based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

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Section: Methodsmentioning

confidence: 99%

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

et al. 2022

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“…Table I presents a summary of some of the best reported GaN HEMTs with their JFOM on different substrates. As can be seen, AlGaN/GaN HEMTs exhibiting a JFOM over 8 THz-V, have been obtained on HR-Si [7,8]. Whereas, JFOM over 10 THz-V is also achieved on AlInN/GaN HEMTs [9]…”

Section: Introductionmentioning

confidence: 93%

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Sanyal

Lin

Wan

et al. 2021

IEEE J. Electron Devices Soc.

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“…On the other hand, gallium arsenide (GaAs) technology takes an edge regarding noise performance. 1,2,3,4,5 There are recently reported works 6,7,8,9 with promising NF for other competitive technologies, that is, SiGe BiCMOS and CMOS. A comparative noise investigation from DC -60 GHz, using 70 nm GaAs, and 60 nm GaN-on-Si processes, has shown superior noise performance of the GaAs process for most of the frequency range.…”

Section: Introductionmentioning

confidence: 99%

“…Over the years, GaN technology also started to take its place in low noise applications due to built‐in power handling capability at the receive end, compact transceiver designs, and high linearity. On the other hand, gallium arsenide (GaAs) technology takes an edge regarding noise performance 1,2,3,4,5 . There are recently reported works 6,7,8,9 with promising NF for other competitive technologies, that is, SiGe BiCMOS and CMOS.…”

Section: Introductionmentioning

confidence: 99%

Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure

Zafar

Aras

Akoglu

et al. 2022

Int J RF Mic Comp-Aid Eng

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GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band lownoise amplifier (LNA). This NF is comparable with state-of-the-art reported works in competitive GaAs and SiGe technologies. Moreover, this is the best reported NF in X-band using GaN technology to date. Two LNAs are fabricated using in-house 0.15 μm AlGaN/GaN on the SiC HEMT process. LNA-1 has inductive source degenerated (ISD) HEMTs at both stages, while LNA-2 has ISD HEMT at the first and common source at the second stage. The significance of ISD HEMT, for the first or subsequent stages in a multi-stage design, towards NF improvement is addressed. The criticality of stability networks towards NF contribution and its design is discussed in detail. Furthermore, even-mode stability of each HEMT after complete LNA design is assured using the S-probe method in Pathwave Advanced Design Systems.

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Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

Cited by 25 publications

References 19 publications

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure

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