Mid-infrared photodetectors based on InSb micro/nanostructures grown on low-cost mica substrates

Shafa, Muhammad; Ji, Haining; Gao, Lei; Yu, Peng; Ding, Qinghua; Zhou, Zhi‐Hua; Li, Handong; Niu, Xiaobin; Wu, Jiang; Wang, Zhiming M.

doi:10.1016/j.matlet.2016.01.063

Cited by 10 publications

(3 citation statements)

References 19 publications

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“…This shows distinct absorption in the mid-infrared region, as shown in figure 2(h). The common absorption peaks of InSb NWs are at 1200 cm −1 (∼8.3 mm), and 1650 cm −1 (∼6.0 mm), which can be tuned by varying the ratios of constituents [29].…”

Section: Resultsmentioning

confidence: 99%

Flexible infrared photodetector based on indium antimonide nanowire arrays

Shafa

Chen

et al. 2021

Nanotechnology

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Narrow bandgap semiconductors like indium antimonide (InSb) are very suitable for high-performance room temperature infrared photodetectors, but the fragile nature of the wafer materials hinders their application as flexible/wearable devices. Here, we present a method to fabricate a photodetector device of assembled crystalline InSb nanowire (NW) arrays on a flexible substrate that balances high performance and flexibility, facilitating its application in wearable devices. The InSb NWs were synthesized by means of a vapor–liquid–solid technique, with gold nanoclusters as seeding particles. The morphological and crystal properties were investigated using scanning electron microscopy, x-ray diffraction and high-resolution transmission electron microscopy, which revealed the unique spike shape and high crystallinity with (111) and (220) planes of InSb NWs. The flexible infrared photodetector devices were fabricated by transferring the NWs onto transparent and stretchable polydimethylsiloxane substrate with pre-deposited gold electrodes. Current versus time measurement of the photodetector devices under light showed photoresponsivity and sensitivity to mid-infrared at bias as low as 0.1 V while attached to curved surfaces (suitable for skin implants). A high-performance NW device yielded efficient rise and decay times down to 1 s and short time lag for infrared detection. Based on dark current, calculated specific detectivity of the flexible photodetector was 1.4 × 1012 Jones. The performance and durability render such devices promising for use as wearable infrared photodetectors.

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Section: Resultsmentioning

confidence: 99%

Flexible infrared photodetector based on indium antimonide nanowire arrays

Shafa

Chen

et al. 2021

Nanotechnology

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“…The detector responsivity, described as the relation between the V sd with respect to second- to first-order derivative of current, was reported by Pitanti et al [ 177 ] who attain the value of about 5. More precisely, to obtain the responsivity near zero bias [ 178 ] as well as to cut down the component of thermionic current, authors introduce a thin film barrier (2–5 nm) of InP thin film barriers at the heterojunction. As a result, fabricated devices are charming for low value noise detector employments.…”

Section: Reviewmentioning

confidence: 99%

Indium Antimonide Nanowires: Synthesis and Properties

et al. 2016

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This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs–Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

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“…Similarly, for photoconductive PDs, an additional bias voltage device is required to start operation. [9][10][11][12][13] Therefore, research on broadband self-powered photodetectors is important.…”

Section: Introductionmentioning

confidence: 99%