Migration of organic residuals in interlayer oxide to interface

Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on p-type Si(100)

“…3,4,15 This most likely occurs during the initial annealing stages consistent with the rapid thermal annealing versus furnace heating results reported by Butler et al 13 and Mizushima et al 3 The interfacial carbon concentration during the early stages of annealing is expected to increase as a function of temperature. Carbon atoms diffuse rapidly from the TEOS oxide through the thermal oxide and pileup at the SiO 2 -Si interface presumably due to a reduced diffusivity in Si relative to SiO 2 .…”

“…2,4,6,9,10,13 The bulk carbon concentration near the thermal oxide/ TEOS interface was primarily a function of the deposited film thickness as shown in Fig. The increasing oxygen diffusivity and interfacial carbon oxidation rate as a function of annealing temperature did not suffice to overcome the combined effect of the higher interfacial carbon concentration and increased film thickness.…”

“…[4][5][6][7] The oxide was etched in an ammonium fluoride buffered HF solution. The wafers were initially cleaned using a piranha etch followed by a HF dip.…”

“…1 The excellent conformality of TEOS based oxides is attributed to the high surface mobility of the adsorbed species formed by plasma excitation of the TEOS molecule. [4][5][6][7] The hydrogen source is typically provided by annealing in ammonia, forming gas or hydrogen, as well as by the deposition of a low-pressure chemical vapor deposition ͑LPCVD͒ silicon nitride layer. Carbon is known to diffuse rapidly through SiO 2 and segregate at the SiO 2 -Si interface.…”

Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas

“…33) it can be seen that the concentration of C is relatively low, about 10 19 cm -3 , regardless of the low deposition temperature of 200 o C, and that it is comparable to the reported value of a TEOS oxide film. 34) This means that most of carbons in SO are eliminated by reaction with O 3 even at with those of the TEOS oxide film (dotted line) produced by electron cyclotron resonance (ECR) PECVD. 5) From this figure, it can be seen that, although the leakage current of the SO oxide film is larger than that of thermal SiO 2 in general, it is comparable with that of the ECR-PECVD film.…”